2SC4636LS [SANYO]

1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications; 1800V / 10mA的大电压放大器,高电压开关应用
2SC4636LS
型号: 2SC4636LS
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
1800V / 10mA的大电压放大器,高电压开关应用

晶体 开关 放大器 晶体管 局域网
文件: 总3页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENN3705B  
NPN Triple Diffused Planar Silicon Transistor  
2SC4636LS  
1800V / 10mA High-Voltage Amplifier,  
High-Voltage Switching Applications  
Features  
Package Dimensions  
unit : mm  
2079D  
High breakdown voltage(V  
min=1800V).  
CEO  
Small Cob(typical Cob=1.4pF).  
Full-isolation package.  
High reliability(Adoption of HVP process).  
[2SC4636LS]  
10.0  
4.5  
3.2  
2.8  
0.9  
1.2  
1.2  
0.75  
0.7  
1
2
3
1 : Base  
2 : Collector  
3 : Emitter  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
2.55  
2.55  
SANYO : TO-220FI(LS)  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
2000  
1800  
5
V
V
I
10  
mA  
mA  
W
C
Collector Current (Pulse)  
Collector Dissipation  
I
30  
CP  
P
2
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
°C  
°C  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=1800V, I =0  
Unit  
min  
max  
1
I
V
CB  
V
EB  
V
CE  
V
CE  
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=4V, I =0  
1
EBO  
C
h
FE  
=5V, I =100µA  
10  
60  
C
Gain-Bandwidth Product  
f
T
=10V, I =100µA  
6
MHz  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6927 No.3705-1/3  
2SC4636LS  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Output Capacitance  
V
V
(sat)  
(sat)  
I
I
I
I
=200µA, I =40µA  
5
2
V
CE  
C
C
C
C
B
=200µA, I =40µA  
V
V
BE  
B
V
V
V
=10µA, I =0  
2000  
1800  
5
(BR)CBO  
E
=100µA, R =∞  
BE  
V
(BR)CEO  
I =10µA, I =0  
E
V
(BR)EBO  
Cob  
C
V
=100V, f=1MHz  
1.4  
pF  
CB  
Thermal Resistance  
Rthj-c  
Junction – case  
12.5  
°C / W  
I
-- V  
I
-- V  
CE  
C
CE  
C
200  
160  
120  
80  
5
4
3
2
450µA  
400µA  
350µA  
8µA  
40  
0
1
0
I =0  
I =0  
B
B
0
3
2
2
4
6
8
10  
0
0
5
2
4
6
8
10  
ITR07369  
Collector-to-Emitter Voltage, V  
-- V ITR07370  
Collector-to-Emitter Voltage, V  
-- V  
CE  
CE  
h
FE  
-- I  
I -- V (on)  
C BE  
C
100  
12  
10  
8
V
=5  
V
=5V  
CE  
CE  
7
5
Ta=120  
°C  
3
2
10  
6
7
5
4
3
2
2
0
1.0  
5
7
2
3
5
7
2
3
5
7
2
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1  
1.0  
10  
Collector Current, I -- mA  
Base-to-Emitter ON Voltage, V (on) -- V ITR07372  
BE  
ITR07371  
C
C
f
-- I  
Cob -- V  
T
CB  
2
2
V
=10V  
f=1MHz  
CE  
10  
10  
7
5
7
5
3
2
3
2
1.0  
7
5
1.0  
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
3
5 7  
0.1  
1.0  
ITR07373  
0.1  
1.0  
10  
100  
ITR07374  
Collector Current, I -- mA  
Collector-to-Base Voltage, V  
-- V  
C
CB  
No.3705-2/3  
2SC4636LS  
V
(sat) -- I  
V
(sat) -- I  
BE C  
CE  
C
10  
5
I
/ I =5  
B
I
/ I =5  
B
C
C
7
5
3
2
3
2
1.0  
1.0  
7
5
7
5
3
2
3
2
0.1  
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
0.1  
1.0  
10  
0.1  
1.0  
10  
ITR07375  
ITR07376  
Collector Current, I -- mA  
Collector Current, I -- mA  
C
A S O C  
P
-- Ta  
C
5
2.4  
2.0  
1.6  
1.2  
0.8  
I
=30mA  
50µs  
CP  
3
2
I =10mA  
C
10  
7
5
3
2
1.0  
7
5
3
2
0.4  
0
Tc=25°C  
Single pulse  
0.1  
5
7
2
3
5
7
2
3
5
0
20  
40  
60  
80  
100  
120  
140  
160  
100  
1000  
ITR07377  
-- V  
ITR07378  
Ambient Temperature, Ta -- °C  
Collector-to-Emitter Voltage, V  
CE  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of January, 2002. Specifications and information herein are subject  
to change without notice.  
PS No.3705-3/3  

相关型号:

2SC4637

High-Voltage Amp, High-Voltage Switching Applications
SANYO

2SC4637LS

1800V/15mA High-Voltage Amplifier,High-Voltage Switching Applications
SANYO

2SC4638

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
PANASONIC

2SC4639

PNP / NPN Transistor
SANYO

2SC4639-5

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-236
ETC

2SC4639-6

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-236
ETC

2SC4639-7

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-236
ETC

2SC4640

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
ETC

2SC4640S

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
ETC

2SC4640T

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
ETC

2SC4640U

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
ETC

2SC4641

PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS
SANYO