2SK3101 [SANYO]

General-Purpose Switching Device Applications; 通用开关设备的应用
2SK3101
型号: 2SK3101
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

General-Purpose Switching Device Applications
通用开关设备的应用

开关 通用开关
文件: 总5页 (文件大小:46K)
下载:  下载PDF数据表文档文件

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864 ETC

2SK3105

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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93 NEC

2SK3105-A

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINI MOLD, SC-96, 3 PIN

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0 NEC

2SK3107

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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94 NEC

2SK3107-AT

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416

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0 RENESAS

2SK3107C

N-CHANNEL MOSFET FOR SWITCHING

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0 RENESAS

2SK3107C-T1-A

N-CHANNEL MOSFET FOR SWITCHING

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0 RENESAS

2SK3107C-T1-AT

N-CHANNEL MOSFET FOR SWITCHING

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0 RENESAS

2SK3108

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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154 NEC

2SK3108

Power Field-Effect Transistor, 8A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN

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4 NEC

2SK3108-AZ

Power Field-Effect Transistor, 8A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN

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0 NEC

2SK3109

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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100 NEC

2SK3109

MOS Field Effect Transistor

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27 KEXIN

2SK3109

Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)

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28 TYSEMI

2SK3109-AZ

Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

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0 NEC