3LN04MH [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device; N沟道MOSFET硅通用开关设备
| 型号： | 3LN04MH |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 文件： | 总4页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0550
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
3LN04MH
Features
•
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
30
±10
0.35
1.4
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)
A
DP
P
D
0.6
W
°C
°C
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=30V, V =0V
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
V
(off)
GS
=10V, I =100µA
0.4
1.3
D
Forward Transfer Admittance
yfs
=10V, I =200mA
360
600
mS
Ω
D
R
(on)1
I
D
I
D
I
D
=200mA, V =4V
GS
0.75
0.9
1.0
1.3
3.6
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=100mA, V =2.5V
GS
Ω
=10mA, V =1.5V
GS
1.8
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
28
pF
pF
pF
ns
ns
ns
ns
DS
DS
DS
Coss
Crss
6.0
3.1
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
17.5
34.2
104
55.5
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
Marking : FD
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806PE SY IM TC-00000232 No. A0550-1/4
3LN04MH
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =4V, I =350mA
0.87
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=10V, V =4V, I =350mA
0.39
0.14
0.86
GS
D
=10V, V =4V, I =350mA
GS
D
V
SD
I =350mA, V =0V
S
1.2
GS
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7019A-003
V
=15V
DD
V
IN
4V
0V
0.15
2.0
3
I
=200mA
D
V
IN
R =75Ω
L
0 to 0.02
D
V
OUT
PW=10µs
D.C.≤1%
R
g
G
1
2
0.65
0.3
3LN04MH
P. G
50Ω
S
1 : Gate
2 : Source
3 : Drain
R =1.2kΩ
g
SANYO : MCPH3
I
-- V
I
-- V
D GS
D
DS
350
300
250
200
150
100
200
180
160
140
120
100
80
V =10V
DS
60
V =1.5V
GS
40
50
0
20
0
0
0.5
1.0
1.5
2.0
2.5
IT11710
0
0.2
0.4
0.6
0.8
1.0
IT11709
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
GS
DS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.0
2.5
Ta=25°C
I
D
=200mA
100mA
2.0
1.5
10mA
1.0
0.5
0
0.5
0
0
1
2
3
4
5
6
7
8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT11711
Ambient Temperature, Ta -- °C
IT11712
GS
No. A0550-2/4
3LN04MH
yfs -- I
I
-- V
S SD
D
1000
3
2
V
=10V
V
=0V
7
5
DS
GS
3
2
1000
7
5
100
7
5
3
2
3
2
100
7
5
10
7
5
3
2
3
2
10
1.0
1.0
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT11714
10
100
1000
Drain Current, I -- mA
IT11713
Diode Forward Voltage, V
-- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
100
7
f=1MHz
V =15V
DS
V =4V
GS
5
Ciss
3
2
100
7
5
10
7
3
2
5
t (on)
d
3
2
10
1.0
7
5
5
0
5
10
15
20
25
30
IT11716
2
3
7
2
3
7
10
100
1000
Drain Current, I -- mA
IT11715
Drain-to-Source Voltage, V
-- V
DS
D
V
-- Qg
A S O
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
2
V
=10V
DS
I
=1.4A
≤10µs
DP
I =350mA
D
1.0
7
5
I =0.35A
D
3
2
0.1
7
Operation in this
area is limited by R (on).
DS
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
0.5
0
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2
3
5
7
2
3
5
7
2
3
5
0.1
1.0
10
IT11717
IT11719
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
IT11708
Ambient Temperature, Ta -- °C
No. A0550-3/4
3LN04MH
Note on usage : Since the 3LN04MH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0550-4/4
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