CPH3360 [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用型号: | CPH3360 |
厂家: | SANYO SEMICON DEVICE |
描述: | General-Purpose Switching Device Applications |
文件: | 总4页 (文件大小:403K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA0114
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH3360
Features
•
ON-resistance R (on)1=233m (typ.)
4V drive
Halogen free compliance
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--30
±20
--1.6
--6.4
0.9
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: CPH3
7015A-004
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.15
0.05
Packing Type: TL
Marking
3
TL
1
2
0.95
1 : Gate
0.4
2 : Source
3 : Drain
Electrical Connection
3
SANYO : CPH3
1
2
http://semicon.sanyo.com/en/network
No. A0114-1/4
N0211PE TKIM TC-00002659
CPH3360
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 30V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =-- 0.8A
1.3
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=-- 0.8A, V =-- 10V
GS
233
380
441
82
303
532
617
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=-- 0.4A, V =-- 4.5V
GS
=-- 0.4A, V =-- 4V
GS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
22
DS
16
t
t
t
t
(on)
4.0
3.3
12
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
5.4
2.2
0.36
0.49
--0.9
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--15V, V =--10V, I =--1.6A
GS
DS
D
V
SD
I =--1.6A, V =0V
--1.5
S
GS
Switching Time Test Circuit
V = --15V
DD
V
IN
0V
--10V
I
= --0.8A
D
V
IN
R =18.75Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH3360
P. G
50Ω
S
I
D
-- V
DS
I
-- V
D GS
--1.6
--2.0
V
= --10V
Ta=25°C
DS
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, V
DS
-- V
IT16626
Gate-to-Source Voltage, V
GS
-- V
IT16627
No. A0114-2/4
CPH3360
R
(on) -- V
GS
R
(on) -- Ta
DS
DS
1000
900
800
700
600
500
400
300
200
1000
900
800
700
600
500
400
300
200
Ta=25°C
I
= --0.4A
D
--0.8A
100
0
100
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT16628
IT16629
GS
| yfs | -- I
I
-- V
D
S SD
10
7
--10
V
= --10V
7
V
=0V
DS
GS
5
3
2
5
--1.0
3
2
7
5
3
2
1.0
7
--0.1
7
5
3
2
5
--0.01
3
2
7
5
3
2
0.1
--0.01
--0.001
2
3
5
7
2
3
5
7
2
3
5
7
--10
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT16631
--0.1
--1.0
Drain Current, I -- A
D
IT16630
Diode Forward Voltage, V -- V
SD
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
100
1000
V
= --15V
= --10V
f=1MHz
DD
7
5
7
V
GS
5
3
2
3
2
10
100
7
5
7
5
t
f
t (on)
d
3
2
3
2
10
1.0
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT16633
--0.1
--1.0
--10
IT16632
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
D
DS
A S O
= --6.4A (PW≤10μs)
V
GS
-- Qg
--10
--10
I
7
V
= --15V
= --1.6A
DP
DS
--9
--8
--7
--6
--5
--4
--3
--2
I
5
D
3
2
I
= --1.6A
D
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
--0.1
7
5
3
2
Ta=25°C
--1
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
IT16634
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
--10
--100
IT16635
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V -- V
DS
No. A0114-3/4
CPH3360
P
-- Ta
D
1.0
0.9
0.8
When mounted on ceramic substrate
(900mm2×0.8mm)
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16636
Note on usage : Since the CPH3360 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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This catalog provides information as of November, 2011. Specifications and information herein are subject
to change without notice.
PS No. A0114-4/4
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