CPH5612 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device; N沟道MOSFET硅通用开关设备
| 型号： | CPH5612 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN8180
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH5612
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
•
2.5V drive.
•
Composite type with 2 MOSFETs contained in a single package, facilitaing-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
100
±10
1
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
4
A
DP
P
0.9
150
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
100
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=100V, V =0
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0
DS
±10
V (off)
GS
=10V, I =1mA
0.4
1.8
1.3
D
Forward Transfer Admittance
yfs
=10V, I =500mA
2.6
S
D
R
(on)1
I
=500mA, V =4V
GS
430
450
350
20
570
650
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
DS
D
D
Static Drain-to-Source On-State Resistance
R
DS
(on)2
I
=500mA, V =2.5V
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
DS
DS
DS
Coss
Crss
12
t (on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
15
d
t
r
11
Turn-OFF Delay Time
Fall Time
t (off)
54
d
t
f
30
Marking : FS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11205PE TS IM TB-00001087
No.8180-1/4
CPH5612
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=50V, V =4V, I =1A
4.4
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=50V, V =4V, I =1A
1.2
GS
D
=50V, V =4V, I =1A
GS
0.8
D
V
SD
I =1A, V =0
S GS
0.82
1.2
Package Dimensions
unit : mm
Electrical Connection
2168
5
4
3
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
2.9
0.15
5
4
3
2
0.05
1
2
Top view
1
0.95
0.4
0.4
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
Switching Time Test Circuit
V
=50V
DD
V
IN
4V
0V
I
=0.5A
D
V
IN
R =100Ω
L
D
V
OUT
PW=10µs
D.C.≤1%
G
CPH5612
P.G
50Ω
S
I
-- V
I
-- V
D GS
D
DS
3.0
2.5
2.0
1.5
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
=10V
DS
0.5
0
0.1
0
V
=1.0V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
IT08336
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT08335
DS
No.8180-2/4
CPH5612
R
DS
(on) -- V
R (on) -- Ta
DS
GS
1200
1000
800
1200
1000
800
Ta=25°C
I =500mA
D
600
600
400
400
200
0
200
0
0
2
4
6
8
10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
IT08337
Ambient Temperature, Ta -- °C
IT08338
y
fs -- I
I
-- V
F SD
D
7
5
5
V =10V
DS
V =0
GS
3
2
1.0
7
5
3
2
3
2
1.0
7
0.1
7
5
3
2
5
0.01
7
5
3
2
3
2
0.1
0.001
0.2
2
3
5
7
2
3
5
7
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.01
0.1
1.0
Drain Current, I -- A
Diode Forward Voltage, V
SD
-- V
IT08340
IT08339
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
7
5
V
V
=50V
=4V
f=1MHz
DD
GS
7
5
Ciss
3
2
3
2
100
100
7
5
7
5
3
2
3
2
t (on)
d
10
7
5
10
7
5
0.01
3
2
3
5
7
2
3
5
7
1.0
2
3
0
10
20
30
40
50
60
70
80
90
100
0.1
Drain Current, I -- A
IT08341
Drain-to-Source Voltage, V
-- V
IT08342
D
DS
V
-- Qg
A S O
GS
7
5
4
<10µs
V
I =1A
D
=50V
DS
3
2
I
DP
=4A
I =1A
D
1.0
3
2
7
5
3
2
0.1
7
5
3
2
Operation in this
0.01
7
5
area is limited by R (on).
1
0
DS
Ta=25°C
3
2
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.001
0.01
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
2
0
1
2
3
4
5
0.1
1.0
10
100
IT08344
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
IT08343
DS
No.8180-3/4
CPH5612
P
-- Ta
D
1.0
0.9
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT08345
Note on usage : Since the CPH5612 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
PS No.8180-4/4
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