CPH5905 [SANYO]
High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications; 高频放大器， AM放大器，低频放大器的应用
| 型号： | CPH5905 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications |
| 文件： | 总5页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN7177
NPN Epitaxial Planar Silicon Transistor
N-Channel Silicon Junction FET
CPH5905
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
Package Dimensions
unit : mm
2196
•
Composite type with J-FET and NPN transistors
contained in the CPH5 package, improving the
mounting efficiency greatly.
[CPH5905]
•
•
2.9
The CPH5905 contains a 2SK3557-equivalent chip
and a 2SC4639-equivalent chip in one package.
Drain and emitter are shared.
0.15
5
4
3
2
0.05
1
0.95
0.4
0.4
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
V
15
--15
10
V
V
DSX
V
GDS
I
G
mA
mA
mW
Drain Current
I
50
D
Allowable Power Dissipation
[TR]
P
200
D
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
V
55
50
V
V
CBO
CEO
EBO
6
V
I
150
300
30
mA
mA
mA
mW
C
Collector Current (Pulse)
Base Current
I
CP
I
B
Collector Dissipation
[Common Ratings]
Total Dissipation
P
200
C
P
300
150
mW
°C
T
Junction Temperature
Storage Temperature
Marking : 1E
Tj
Tstg
--55 to +150
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22802 TS IM TA-3495 No.7177-1/5
CPH5905
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[FET]
Gate-to-Drain Breakdown Voltage`
Gate Cutoff Current
V
I
=--10µA, V =0
--15
V
(BR)GDS
G DS
I
V
V
V
V
V
V
V
=--10V, V =0
DS
--1.0
nA
V
GSS
(off)
GS
DS
DS
DS
DS
DS
DS
Cutoff Voltage
V
=5V, I =100µA
--0.4
10.0*
24
--0.7
--1.5
GS
D
Drain Current
I
=5V, V =0
GS
32.0*
mA
mS
pF
pF
dB
DSS
yfs
Forward Transfer Admittance
Input Capacitance
=5V, V =0, f=1kHz
GS
35
10.0
2.9
Ciss
Crss
NF
=5V, V =0, f=1MHz
GS
Reverse Transfer Capacitance
Noise Figure
=5V, V =0, f=1MHz
GS
=5V, Rg=1kΩ, I =1mA, f=1kHz
1.0
D
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
V
V
V
=35V, I =0
0.1
0.1
µA
µA
CBO
CB
E
I
=4V, I =0
C
EBO
EB
CE
CE
CB
h
FE
=6V, I =1mA
135
400
C
Gain-Bandwidth Product
Output Capacitance
f
=6V, I =10mA
C
200
1.7
MHz
pF
V
T
Cob
=6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
(sat)
I
C
I
C
I
C
I
C
=50mA, I =5mA
0.08
0.8
0.4
1.0
CE
B
(sat)
=50mA, I =5mA
V
BE
B
V
V
V
=10µA, I =0
55
50
6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=1mA, R =∞
BE
V
I =10µA, I =0
E
V
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
0.15
0.75
0.20
µs
µs
µs
on
Storage Time
t
stg
Fall Time
t
f
* : The CPH5905 is classified by I
DSS
as follows : (unit : mA)
Rank
G
H
I
10.0 to 20.0
16.0 to 32.0
DSS
The specifications shown above are for each individual FET or a transistor.
Electrical Connection (Top view)
Switching Time Test Circuit
B
E / D
S
I
B1
PC=20µs
D.C.≤1%
OUTPUT
I
B2
1kΩ
INPUT
R
2kΩ
L
V
R
50Ω
C
G
+
+
220µF
470µF
V
= --5V
V
=20V
CC
BE
10I = --10I =I =10mA
B1 B2
C
I
-- V
I
-- V
DS
[FET]
[FET]
D
DS
D
20
16
12
8
20
16
12
8
4
0
4
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
8
10
12
ITR02750
Drain-to-Source Voltage, V
-- V ITR02749
Drain-to-Source Voltage, V
-- V
DS
DS
No.7177-2/5
CPH5905
I
-- V
[FET]
I
-- V
GS
[FET]
D
GS
D
22
20
18
16
14
12
10
8
16
14
12
V
=5V
=15mA
V
=5V
DS
DS
I
DSS
10
8
6
6
4
2
0
4
2
0
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.2
IT04224
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.2
Gate-to-Source Voltage, V
-- V
ITR02752
Gate-to-Source Voltage, V
-- V
GS
GS
yfs -- I
D
[FET]
[FET]
yfs -- I
DSS
7
5
100
V
V
=5V
DS
V
=5V
DS
=0
f=1kHz
f=1kHz
GS
7
5
3
2
3
2
10
7
5
3
2
10
3
7
7
5
7
2
3
5
7
2
3
5
7
2
3
5
1.0
10
10
Drain Current, I -- mA
Drain Current, I -- mA
DSS
IT04225
[FET]
IT04226
D
[FET]
=0
V
(off) -- I
Ciss -- V
GS
DSS
DS
3
2
3
2
V
=5V
V
DS
GS
I =100µA
f=1MHz
D
10
1.0
7
5
7
5
3
3
2
3
5
7
2
3
5
7
2
3
10
1.0
10
Drain Current, I
DSS
-- mA
IT04227
[FET]
=0
IT04228
[FET]
=5V
Drain-to-Source Voltage, V
-- V
DS
NF -- f
Crss -- V
DS
10
10
8
V
V
DS
DS
f=1MHz
I =1mA
D
7
5
Rg=1kΩ
6
3
2
4
1.0
2
0
7
5
2
3
5
7
2
3
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
100
1.0
10
0.01
0.1
1.0
10
IT04229
ITR02758
Drain-to-Source Voltage, V
-- V
Frequency, f -- kHz
DS
No.7177-3/5
CPH5905
NF -- Rg
[FET]
P
-- Ta
[FET]
D
10
8
240
200
160
120
80
V
=5V
DS
=1mA
I
D
f=1kHz
6
4
2
0
40
0
2
3
5 7
2
3
5 7
2
3
5 7
100
2
3
5 7
1000
0
20
40
60
80
100
120
140
160
0.1
1.0
10
ITR02759
ITR02760
Ambient Temperature, Ta -- °C
Signal Source Resistance, Rg -- kΩ
I
-- V
[TR]
I
-- V
CE
[TR]
C
CE
C
50
45
40
35
30
25
20
15
10
12
10
8
30µA
6
25µA
µA
100
20µA
4
15µA
50µA
10µA
5µA
2
0
5
0
I =0
I =0
B
40
B
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
5
10
15
20
25
30
35
45
50
Collector-to-Emitter Voltage, V
-- V
Collector-to-Emitter Voltage, V
-- V ITR10376
[TR]
ITR10377
CE
CE
I
-- V
h
FE
-- I
C
[TR]
C
BE
2
160
140
120
100
80
V
=6V
CE
V
=6V
CE
1000
7
5
Ta=75°C
3
2
25°C
60
40
--25°C
100
7
20
0
5
3
2
3
5
2
3
5
2
3
5
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10
100
Collector Current, I -- mA
ITR10379
Base-to-Emitter Voltage, V
BE
-- V ITR10378
[TR]
C
f
-- I
Cib -- V
[TR]
T
C
EB
7
5
5
V
=6V
f=1MHz
CE
3
2
3
2
10
7
5
100
7
5
3
2
3
2
1.0
2
3
5
7
2
3
5
7
2
5
7
2
3
5
7
1.0
10
100
ITR10380
1.0
10
Emitter-to-Base Voltage, V
EB
-- V ITR10381
Collector Current, I -- mA
C
No.7177-4/5
CPH5905
Cob -- V
[TR]
f=1MHz
V
(sat) -- I
C
[TR]
CB
CE
3
2
5
I
/ I =10
B
C
3
2
1.0
7
5
10
7
5
3
2
3
2
0.1
7
5
1.0
3
2
7
5
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
1.0
10
100
Collector-to-Base Voltage, V
-- V
Collector Current, I -- mA
ITR10382
ITR10383
CB
C
V
(sat) -- I
[TR]
P -- Ta
C
[TR]
BE
C
250
200
150
100
10
I
/ I =10
B
C
7
5
3
2
1.0
7
5
50
0
3
2
3
5
7
2
3
5
7
2
0
20
40
60
80
100
120
140
160
1.0
10
100
ITR10384
Ambient Temperature, Ta -- °C
ITR10385
Collector Current, I -- mA
C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.
PS No.7177-5/5
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