CPH6532 [SANYO]
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications; NPN外延平面硅晶体管的DC / DC转换器应用
| 型号： | CPH6532 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0522
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
CPH6532
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, flash.
Features
• Composite type with two NPN transistors contained in one package facilitating high-density mounting.
• The two chips contained are equivalent to the CPH3216.
• Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
80
80
CBO
V
V
CES
CEO
EBO
V
V
50
V
5
V
I
1.0
2
A
C
Collector Current (Pulse)
Base Current
I
A
CP
I
B
200
0.9
1.1
150
mA
W
W
°C
°C
Collector Dissipation
P
Mounted on a ceramic board (600mm2✕0.8m) 1unit
Mounted on a ceramic board (600mm2✕0.8m)
C
Total Power Dissipation
Junction Temperature
Storage Temperature
P
T
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
0.1
I
V
V
V
V
V
=40V, I =0A
µA
µA
CBO
CB
EB
CE
CE
CB
E
Emitter Cutoff Current
DC Current Gain
I
=4V, I =0A
0.1
EBO
C
h
FE
=2V, I =100mA
200
560
C
Gain-Bandwidth Product
Output Capacitance
Marking : ET
f
T
=10V, I =300mA
C
420
6
MHz
pF
Cob
=10V, f=1MHz
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11007EA TI IM TC-00000428 No. A0522-1/4
CPH6532
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=500mA, I =10mA
Unit
min
max
190
V
V
(sat)1
I
I
I
I
I
I
130
mV
mV
V
CE
CE
C
C
C
C
C
C
B
Collector-to-Emitter Saturation Voltage
(sat)2
(sat)
=300mA, I =6mA
90
135
1.2
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turm-ON Time
V
=500mA, I =10mA
0.81
BE
B
V
=10µA, I =0A
80
V
(BR)CBO
E
V
=100µA, R =0Ω
BE
80
50
5
V
(BR)CES
(BR)CEO
(BR)EBO
V
V
=1mA, R =∞
BE
V
I =10µA, I =0A
V
E
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
38
332
40
ns
ns
ns
on
Storage Time
t
stg
Fall Time
t
f
Note) The specifications shown above are for each individual transistor.
Package Dimensions
unit : mm (typ)
Electrical Connection
6
5
4
1 : Emitter1
2 : Base1
7018A-006
3 : Collector2
4 : Emitter2
5 : Base2
2.9
5
0.15
0.05
6
4
3
6 : Collector1
1
2
3
Top view
1
2
0.95
1 : Emitter1
2 : Base1
0.4
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
SANYO : CPH6
Switching Time Test Circuit
I
B1
I
C
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
+
+
50Ω
100µF
= --5V
470µF
V
V
=25V
CC
BE
20I = --20I =I =500mA
B1 B2
C
No. A0522-2/4
CPH6532
I
-- V
I
-- V
C
CE
C
BE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
CE
=2V
0.1
0
0.1
0
I =0mA
B
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base-to-Emitter Voltage, V
-- V
Collector-to-Emitter Voltage, V
-- V IT11441
IT11416
BE
CE
f
-- I
h
FE
-- I
T
C
C
1000
5
V
CE
=10V
V
CE
=2V
3
2
7
5
Ta=75°C
3
2
1000
7
5
25°C
3
2
100
7
5
100
7
5
3
2
3
2
0.01
10
0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
0.1
1.0
0.1
1.0
Collector Current, I -- A
IT01648
Collector Current, I -- A
IT01650
C
C
V
(sat) -- I
CE
Cob -- V
CB
C
3
2
100
f=1MHz
I
C
/ I =20
B
7
5
3
2
0.1
7
5
10
3
2
7
5
3
2
0.01
0.01
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
2
3
5
7
2
3
5
7
0.1
1.0
10
0.1
1.0
IT11418
Collector Current, I -- A
Collector-to-Base Voltage, V
-- V
IT01652
C
CB
V
(sat) -- I
CE
V
(sat) -- I
C
BE
C
10
5
I
C
/ I =50
B
I
C
/ I =50
B
7
5
3
2
3
2
0.1
1.0
Ta= --25°C
75°C
7
5
7
5
25°C
3
2
3
2
0.1
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.01
0.1
1.0
IT11420
0.1
1.0
IT01658
Collector Current, I -- A
Collector Current, I -- A
C
C
No. A0522-3/4
CPH6532
A S O
P
-- Ta
C
5
1.4
Mounted on a ceramic board (600mm2✕0.8mm)
3
2
I
=2A
CP
1.2
1.1
1.0
0.9
0.8
I =1A
C
1.0
7
5
3
2
0.6
0.4
0.1
7
5
3
2
Ta=25°C
0.2
0
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
1.0
10
Collector-to-Emitter Voltage, V
-- V IT11541
Ambient Temperature, Ta -- °C
IT10764
CE
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0522-4/4
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