CPH6539 [SANYO]

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications; NPN外延平面硅晶体管的DC / DC转换器应用


型号：	CPH6539
厂家：	SANYO SEMICON DEVICE
描述：	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications NPN外延平面硅晶体管的DC / DC转换器应用晶体转换器晶体管
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CPH6539

Ordering number : ENA1756

SANYO Sem iconductors

DATA S HEET

NPN Epitaxial Planar Silicon Transistor

CPH6539

DC / DC Converter Applications

Features

•

Small-sized package with two NPN transistors (CPH3215 equivalency) contained in one package

•

=30V, I =1.5A

CEO

(sat)=0.16V(typ.)@I =0.75A

CE C

Low Collector-to-Emitter Saturation Voltage

High-speed switching

t =30ns(typ.)@I =0.75A

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

1.5

Collector Current (Pulse)

Base Current

300

0.9

1.2

150

Collector Dissipation

Total Power Dissipation

Junction Temperature

Storage Temperature

When mounted on ceramic substrate (600mm²×0.8mm)

Tstg

-55 to +150

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: CPH6

• JEITA, JEDEC

: SC-96, SC-95, SOT346, SOT457

7018A-006

• Minimum Packing Quantity : 3,000 pcs./reel

2.9

0.15

0.05

Packing Type: TL

Marking

LOT No.

0.95

1 : Emitter1

2 : Base1

0.4

3 : Collector2

4 : Emitter2

5 : Base2

Electrical Connection

6 : Collector1

SANYO : CPH6

http://semicon.sanyo.com/en/network

No. A1756-1/4

70710EA TK IM TC-00002405

CPH6539

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

0.1

Collector Cutoff Current

Emitter Cutoff Current

=30V, I =0A

CBO

CB E

=4V, I =0A

0.1

EBO

EB C

DC Current Gain

=2V, I =100mA

200

560

Gain-Bandwidth Product

Output Capacitance

=10V, I =300mA

500

MHz

CE C

Cob

=10V, f=1MHz

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-On Time

(sat)

=750mA, I =15mA

160

0.85

250

1.2

I =750mA, I =15mA

C B

=10 A, I =0A

(BR)CBO

=1mA, R

∞

(BR)CEO

I =10 A, I =0A

(BR)EBO

See speciﬁed Test Circuit.

205

Storage Time

stg

Fall Time

Switching Time Test Circuit

PW=20μs

D.C.≤1%

OUTPUT

INPUT

16Ω

50Ω

100μF

470μF

= --5V

=12V

20I 1= --20I 2=I =750mA

-- V

C BE

2.0

1.8

0.8

0.7

0.6

0.5

0.4

0.3

0.2

=2V

40mA

1.6

1.4

1.2

8mA

1.0

0.8

0.6

0.4

2mA

0.1

0.2

I =0mA

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

IT15613

Collector-to-Emitter Voltage, V

-- V IT15612

Base-to-Emitter Voltage, V -- V

No. A1756-2/4

CPH6539

-- I

T C

=2V

=10V

1000

100

0.01

0.1

1.0

0.01

0.1

1.0

IT15614

Collector Current, I -- A

IT01680

Cob -- V

(sat) -- I

CE C

100

/ I =20

f=1MHz

0.1

0.01

--0.1

--1.0

--10

-- V

0.1

1.0

IT15615

Collector-to-Base Voltage, V

IT01682

Collector Current, I -- A

(sat) -- I

BE C

/ I =50

1.0

0.1

25°C

0.01

0.1

1.0

IT15616

0.1

1.0

IT15617

Collector Current, I -- A

-- Ta

A S O

1.4

1.2

=3A

I =1.5A

1.0

0.9

0.8

1.0

0.6

0.4

0.1

0.2

Ta=25

Single pulse

Mounted on a ceramic board(600mm²✕0.8mm)

°C

Mounted on a ceramic board(600mm²✕0.8mm)

0.01

100

120

140

160

0.1

1.0

100

-- V IT02326

IT02327

Ambient Temperature, Ta -- °C

Collector-to-Emitter Voltage, V

No. A1756-3/4

CPH6539

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and

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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be

granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any

third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third

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mentioned above.

This catalog provides information as of July, 2010. Speciﬁcations and information herein are subject

to change without notice.

PS No. A1756-4/4

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