CPH6801 [SANYO]
DC/DC Converter Applications; DC / DC转换器应用
| 型号： | CPH6801 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | DC/DC Converter Applications |
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:EN6419
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
CPH6801
DC/DC Converter Applications
Features
Package Dimensions
unit:mm
· The CPH6801 consists of a P-channel MOSFET that
features low ON resistance, ultrahigh-speed switch-
ing, and low-voltage drive, and a shottky barrier
diode that features short reverse recovery time and
low forward voltage, therefore enabling high-density
mounting.
2172
[CPH6801]
0.15
2.9
4
5
6
· Each device incorporated in the CPH6801 is equiva-
lent with the 2SJ560 and the SBS004, respectively.
0.05
1
2
3
1 : Gate
0.95
2 : Source
3 : Anode
4 : Drain (Cathode Common)
5 : Drain (Cathode Common)
6 : Drain (Cathode Common)
SANYO : CPH6
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
V
–20
±10
–1
V
V
DSS
V
GSS
I
A
D
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm2×0.8mm)
–4
A
DP
P
D
Tch
0.9
150
W
˚C
˚C
Tstg
–55 to +125
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Current
V
15
V
V
RRM
V
15
1
RSM
I
A
O
I
50Hz sine wave, 1 cycle
10
A
FSM
Junction Temperature
Storage Temperature
Tj
–55 to +125
–55 to +125
˚C
˚C
Tstg
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2492 No.6419–1/5
CPH6801
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=–1mA, V =0
D GS
–20
V
µA
µA
V
(BR)DSS
I
V
V
V
V
I
=–20V, V =0
–10
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0
DS
=–10V, I =–1mA
D
=–10V, I =–500mA
D
±10
GSS
V
(off)
–0.4
1.0
–1.4
GS
| yfs |
Forward Transfer Admittance
1.4
420
630
100
60
S
R
(on)1
=–500mA, V =–4V
GS
550
890
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
D
Static Drain-to-Source On-State Resistance
R
(on)2
I
=–300mA, V =–2.5V
GS
DS
D
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=–10V, f=1MHz
DS
Coss
Crss
=–10V, f=1MHz
DS
=–10V, f=1MHz
DS
25
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
10
d(on)
t
25
r
Turn-OFF Delay Time
Fall Time
t
27
d(off)
t
f
Qg
32
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
[SBD]
V
V
V
=–10V, V =–10V, I =1.0A
GS
=–10V, V =–10V, I =1.0A
GS
=–10V, V =–10V, I =1.0A
GS
5
DS
DS
DS
D
Qgs
Qgd
1
D
1
D
V
I =–1.0A, V =0
–0.9
–1.5
SD
S
GS
Reverse Voltage
V
R
V 1
F
V 2
F
I
=1mA
15
V
V
R
I =0.5A
F
I =1A
F
0.30
0.35
0.35
0.40
500
Forward Voltage
V
Reverse Current
I
V
=6V
µA
pF
ns
R
R
R
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
V
=10V, f=1MHz cycle
42
t
I =I =100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2×0.8mm)
15
rr
F R
Rthj-a
110
˚C/W
Marking : QB
Electrical Connection (Top view)
Cathode Common
D
D
D
G
S
A
Switching Time Test Circuit
[MOSFET]
t Test Circuit
rr
[SBD]
V
=--10V
DD
V
IN
I
=--500mA
D
0V
--4V
R =20Ω
L
D
V
OUT
V
IN
Duty≤10%
PW=10µs
D.C.≤1%
50Ω
100Ω
10Ω
G
10µs
CPH6801
P. G
50Ω
S
--5V
t
rr
No.6419–2/5
CPH6801
I
-- V
DS
I
-- V
GS
[MOSFET]
[MOSFET]
D
D
--3.0
--1.6
--1.4
--1.2
--1.0
--0.8
V
=--10V
DS
--8.0V
--2.5
--2.0
--1.5
--2.0V
--0.6
--0.4
--0.2
0
--1.0
--0.5
0
V
=--1.5V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, V
– V
Gate-to-Source Voltage, V
– V
DS
GS
IT00780
IT00781
R
(on) -- V
[MOSFET]
R (on) -- Ta
DS
[MOSFET]
DS
GS
1000
900
800
700
600
500
400
300
200
1000
900
800
700
600
500
400
300
200
Ta=25°C
I =--300mA
D
--500mA
100
0
100
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta – ˚C
Gate-to-Source Voltage, V
– V
GS
IT00782
IT00783
yfs -- I
[MOSFET]
I
-- V
F SD
[MOSFET]
D
10
7
--10
7
5
V
= 0
V
=--10V
GS
DS
5
3
2
3
2
--1.0
7
5
1.0
7
3
2
5
--0.1
7
5
3
2
3
2
0.1
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--0.01
--0.1
--10
IT00784
Drain Current, I –--1A.0
D
Diode Forward Voltage, V
SD
– V
IT00785
SW Time -- I
[MOSFET]
Ciss, Coss, Crss -- V
[MOSFET]
f=1MHz
D
DS
1000
5
V
=--10V
DD
=--4V
7
3
2
V
GS
5
3
2
100
t
r
7
5
t
f
Ciss
100
3
2
7
5
Coss
t (on)
d
10
3
2
Crss
7
5
t (off)
d
3
2
10
3
5
7
2
3
5
7
2
3
5
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
Drain-to-Source Voltage, V
--0.1
--1.0
Drain Current, I – A
D
– V
DS
IT00787
IT00786
No.6419–3/5
CPH6801
V
-- Qg
A S O
[MOSFET]
[MOSFET]
100µs
GS
--10
--9
--8
--7
--6
--5
--4
--3
--2
--10
7
5
V
=--10V
DS
I
=--4.0A
DP
I =--1A
D
3
2
I =--1.0A
D
--1.0
7
5
3
2
Operation in
this area is
limited by R (on).
DS
--0.1
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2×0.8mm)
--1
0
--0.01
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
3
5
7
2
3
5
7
2
3
5
--0.1
--1.0
--10
Total Gate Charge, Qg – nC
Drain-to-Source Voltage, V
– V
DS
IT00788
IT00790
P
-- Ta
[MOSFET]
I
-- V
[SBD]
D
F
F
1.2
5
3
2
1.0
0.9
0.8
1.0
7
5
3
2
0.6
0.4
0.1
7
5
3
2
0.2
0
0.01
20
40
60
80
100
120
140
160
0
0
7
0.1
0.2
0.3
0.4
0.5
Ambient Temperature, Ta – ˚C
Forward Voltage, V – V
F
IT00789
IT00622
I
-- V
P (AV) -- I
F
[SBD]
[SBD]
R
R
O
100
7
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
⁄Rectangular wave θ=60°
¤Rectangular wave θ=120°
‹Rectangular wave θ=180°
›Sine wave θ=180°
3
2
10
7
5
3
2
‹
›
¤
⁄
1.0
7
5
3
2
Rectangular wave
θ
0.1
7
5
360°
Sine wave
0.1
0
3
2
180°
360°
0.01
5
10
15
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Reverse Voltage, V – V
Average Forward Current, I -- A
R
O
IT00623
IT00624
C -- V
[SBD]
I
-- t
S
[SBD]
R
1000
12
10
8
Current waveform 50Hz sine wave
f=1MHz
7
5
Is
3
2
20ms
t
100
7
5
6
3
2
4
10
7
5
2
0
3
2
1.0
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1.0
2
3
1.0
10
0.01
0.1
Time, t – s
Reverse Voltage, V – V
R
IT00625
IT00626
No.6419–4/5
CPH6801
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6419–5/5
相关型号：
CPH6901
N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifier, Differential Amplifier, Analog Switch Applications
SANYO
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