EC3H02BA [SANYO]
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications; NPN外延平面硅晶体管VHF超高频的宽带低噪声放大器的应用
| 型号： | EC3H02BA |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| 文件： | 总5页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1064A
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
EC3H02BA
Features
• Low noise : NF=1.0dB typ (f=1GHz).
High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
•
•
•
•
High cutoff frequency : f =7GHz typ.
T
Ultrasmall (1006size), slim (0.5mm) leadless package.
Halogen free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
20
10
V
2
V
I
C
70
mA
mW
°C
°C
Collector Dissipation
P
100
150
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=10V, I =0A
Unit
min
max
1.0
10
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
V
V
V
V
μA
μA
CBO
CB
EB
CE
CE
CB
CB
E
I
=1V, I =0A
C
EBO
h
=5V, I =20mA
120
180
FE
C
Gain-Bandwidth Product
Output Capacitance
f 1
T
=5V, I =20mA
C
5
7
GHz
pF
Cob
Cre
=10V, f=1MHz
=10V, f=1MHz
0.7
1.2
Reverse Transfer Capacitance
0.45
pF
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
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device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70908 TI IM TC-00001504 / 42308AB TI IM TC-00001344 No. A1064-1/5
EC3H02BA
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
S21e 21
V
CE
V
CE
V
CE
=5V, I =20mA, f=1GHz
C
9
12
dB
dB
dB
⏐
⏐
⏐
Forward Transfer Gain
Noise Figure
S21e 22
=2V, I =3mA, f=1GHz
C
8.5
1.0
⏐
NF
=5V, I =7mA, f=1GHz
1.8
C
Package Dimensions
unit : mm (typ)
7039-005
Top View
Polarity Discriminating Mark
3
2
1
0.6
0.5
0.05
1
2
3
0.15
0.05
1 : Collector
2 : Base
3 : Emitter
0.15
0.2
0.35
Bottom View
SANYO : ECSP1006-3B
Type No. Indication (Top view)
Electrical Connection (Top view)
Polarity mark (Top)
B
Base
Collector
Emitter
*Electrodes : Bottom
Polarity mark (Top)
Collector
Base
Emitter
No. A1064-2/5
EC3H02BA
h
FE
-- I
f
-- I
C
C
T
3
2
2
V
=5V
V
=5V
CE
CE
10
100
7
5
7
5
3
2
3
2
1.0
10
7
5
7
5
3
7
3
0
5
7
2
3
5
7
2
3
5
7
2
7
7
3
2
3
5
7
2
3
5
7
2
1.0
10
100
1.0
10
100
Collector Current, I -- mA
IT01363
IT01364
Collector Current, I -- mA
C
C
Cob -- V
Cre -- V
CB
CB
3
2
3
2
f=1MHz
f=1MHz
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
7
5
7
5
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
0.1
1.0
10
0.1
1.0
10
Collector-to-Base Voltage, V
-- V IT01365
Collector-to-Base Voltage, V
-- V IT01366
CB
CB
⏐S21e⏐2 -- I
NF -- I
C
C
14
12
10
8
12
10
8
V
=5V
f=1GHz
CE
f=1GHz
6
6
4
4
2
0
2
0
5
7
2
3
5
7
2
3
5
7
2
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
IT01367
1.0
10
100
Collector Current, I -- mA
Collector Current, I -- mA
IT01368
C
C
P
-- Ta
C
120
100
80
60
40
20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT01369
No. A1064-3/5
EC3H02BA
S Parameters (Common emitter)
V
V
V
V
=1V, I =1mA, Z =50Ω
CE
C
O
Freq(MHz)
⏐S11
⏐
∠S11
--22.6
⏐S21
⏐
∠S21
163.3
148.7
124.8
107.7
94.2
⏐S12
⏐
∠S12
76.0
63.2
44.2
31.3
23.5
17.7
14.7
12.0
10.7
10.8
13.0
⏐S22
⏐
∠S22
--10.5
--19.6
--32.9
--41.5
--47.7
--52.2
--57.6
--61.9
--66.1
--71.6
--76.5
100
0.955
0.922
0.845
0.782
0.746
0.734
0.717
0.707
0.708
0.711
0.712
3.418
3.109
2.617
2.156
1.788
1.498
1.326
1.154
1.029
0.953
0.880
0.056
0.104
0.165
0.189
0.200
0.201
0.198
0.193
0.182
0.171
0.160
0.975
0.921
0.794
0.694
0.630
0.596
0.573
0.559
0.561
0.561
0.569
200
--43.0
400
--77.2
600
--101.8
--119.1
--131.1
--141.2
--148.9
--155.5
--161.6
--166.5
800
1000
1200
1400
1600
1800
2000
83.7
74.6
66.6
60.2
54.6
49.3
=1V, I =5mA, Z =50Ω
CE
C
O
Freq(MHz)
⏐S11
⏐
∠S11
--47.9
⏐S21
⏐
∠S21
150.0
129.6
107.4
95.9
87.5
80.7
75.1
70.1
65.5
61.1
57.0
⏐S12
⏐
∠S12
64.3
49.6
37.8
35.4
36.3
38.4
40.8
43.1
45.1
47.1
48.6
⏐S22
⏐
∠S22
--29.8
--50.0
--71.3
--81.7
--89.2
--94.7
--99.0
--102.8
--106.4
--109.8
--112.1
100
0.818
0.739
0.661
0.627
0.616
0.614
0.611
0.607
0.607
0.610
0.609
13.330
10.545
6.688
4.726
3.653
2.989
2.534
2.207
1.965
1.776
1.627
0.049
0.076
0.098
0.106
0.114
0.122
0.130
0.139
0.149
0.159
0.171
0.869
0.681
0.445
0.334
0.279
0.252
0.238
0.231
0.227
0.230
0.237
200
--83.2
400
--122.9
--142.2
--153.8
--161.8
--167.3
--172.2
--176.6
179.8
600
800
1000
1200
1400
1600
1800
2000
176.9
=2V, I =3mA, Z =50Ω
CE
C
O
Freq(MHz)
⏐S11
⏐
∠S11
--32.1
⏐S21
⏐
∠S21
158.3
141.0
117.5
103.4
93.1
⏐S12
⏐
∠S12
72.1
57.6
41.8
34.5
32.2
32.0
33.1
35.2
37.6
40.3
43.2
⏐S22
⏐
∠S22
--17.1
--30.2
--45.5
--52.3
--56.5
--59.9
--62.9
--66.0
--69.1
--72.9
--76.4
100
0.890
0.827
0.725
0.666
0.641
0.631
0.624
0.618
0.616
0.618
0.618
9.129
7.989
5.823
4.355
3.448
2.854
2.436
2.124
1.894
1.715
1.571
0.042
0.073
0.104
0.115
0.121
0.125
0.128
0.131
0.134
0.139
0.144
0.938
0.824
0.618
0.496
0.429
0.392
0.372
0.360
0.352
0.351
0.357
200
--59.6
400
--98.7
600
--121.9
--136.9
--147.3
--154.9
--161.3
--166.7
--171.4
--175.1
800
1000
1200
1400
1600
1800
2000
85.1
78.5
72.8
67.5
62.7
58.1
=2V, I =10mA, Z =50Ω
CE
C
O
Freq(MHz)
⏐S11
⏐
∠S11
--60.8
⏐S21
⏐
∠S21
143.7
122.8
103.3
93.9
86.9
81.1
76.3
72.1
68.1
64.2
60.5
⏐S12
⏐
∠S12
62.1
49.2
44.8
47.3
50.9
53.6
56.0
57.7
58.8
59.5
59.8
⏐S22
⏐
∠S22
--36.1
--56.8
--75.8
--84.5
--90.9
--95.4
--99.0
--102.6
--105.3
--107.8
--109.2
100
0.715
0.643
0.589
0.570
0.564
0.563
0.560
0.558
0.558
0.562
0.561
21.486
15.499
9.112
6.296
4.816
3.921
3.308
2.867
2.550
2.293
2.092
0.035
0.051
0.065
0.075
0.087
0.098
0.112
0.125
0.139
0.155
0.169
0.806
0.580
0.355
0.261
0.215
0.192
0.181
0.172
0.169
0.170
0.176
200
--98.6
400
--135.1
--151.5
--161.1
--167.7
--172.3
--176.2
180.0
600
800
1000
1200
1400
1600
1800
2000
176.8
174.4
No. A1064-4/5
EC3H02BA
S Parameters (Common emitter)
V
CE
=5V, I =7mA, Z =50Ω
C
O
Freq(MHz)
⏐S11
⏐
∠S11
⏐S21
⏐
∠S21
152.0
132.4
110.4
98.9
90.8
84.3
79.0
74.4
70.0
65.8
61.9
⏐S12
⏐
∠S12
68.4
55.1
45.4
44.6
46.8
49.9
52.4
55.0
57.0
58.6
59.9
⏐S22
⏐
∠S22
--22.3
--36.7
--48.9
--52.5
--54.0
--55.4
--56.7
--57.9
--60.1
--63.0
--65.8
100
0.797
0.708
0.608
0.565
0.550
0.547
0.541
0.537
0.539
0.540
0.540
--42.9
17.630
14.170
9.186
6.534
5.055
4.134
3.497
3.025
2.687
2.425
2.212
0.030
0.048
0.064
0.073
0.081
0.089
0.098
0.109
0.119
0.130
0.142
0.892
0.723
0.494
0.385
0.329
0.299
0.285
0.277
0.270
0.271
0.277
200
--76.1
400
--116.0
--136.4
--148.8
--157.0
--163.2
--168.1
--172.5
--176.5
--179.4
600
800
1000
1200
1400
1600
1800
2000
V
CE
=5V, I =20mA, Z =50Ω
C O
Freq(MHz)
⏐S11
⏐
∠S11
--71.5
⏐S21
⏐
∠S21
138.1
117.7
100.5
92.4
86.2
81.1
76.8
73.0
69.3
65.7
62.3
⏐S12
⏐
∠S12
60.6
52.7
54.5
58.7
62.2
64.7
66.2
67.2
67.4
67.4
67.1
⏐S22
⏐
∠S22
--37.0
--52.9
--62.6
--64.0
--64.9
--66.0
--67.0
--68.2
--70.1
--72.4
--74.8
100
0.618
0.554
0.519
0.507
0.504
0.505
0.504
0.502
0.504
0.508
0.507
30.252
20.311
11.419
7.810
5.941
4.816
4.051
3.502
3.107
2.788
2.539
0.023
0.034
0.046
0.058
0.071
0.084
0.098
0.112
0.127
0.142
0.155
0.748
0.511
0.306
0.230
0.193
0.175
0.167
0.162
0.159
0.161
0.169
200
--110.5
--143.1
--156.8
--165.0
--170.5
--174.3
--177.8
178.9
400
600
800
1000
1200
1400
1600
1800
2000
176.0
173.9
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ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1064-5/5
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