ENA0977 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | ENA0977 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0977
SANYO Sem iconductors
DATA S HEET
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
FW377
Features
• For motor drivers, inverters.
• Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
• High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
35
P-channel
--35
Unit
V
V
V
DSS
±20
6
±20
--5
V
GSS
I
D
I
D
I
D
A
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
duty cycle≤1%
duty cycle≤1%
duty cycle≤1%
7
--6
A
10
24
--10
--20
A
I
A
DP
Mounted on a ceramic board
(1500mm2✕0.8mm)1unit, PW≤10s
Mounted on a ceramic board
(1500mm2✕0.8mm), PW≤10s
Allowable Power Dissipation
Total Dissipation
P
1.8
W
W
D
P
T
2.2
Channel Temperature
Storage Temperature
Marking : W377
Tch
150
°C
°C
Tstg
--55 to +150
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2107PA TI IM TC-00001038
No. A0977-1/6
FW377
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
35
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=35V, V =0V
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±16V, V =0V
DS
±10
V
(off)
GS
=10V, I =1mA
1.2
4.6
2.6
D
Forward Transfer Admittance
yfs
⏐
=10V, I =6A
7.8
25
S
⏐
D
R
(on)1
I
I
=6A, V =10V
GS
33
61
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
D
Static Drain-to-Source On-State Resistance
R
(on)2
=3A, V =4V
GS
43
DS
D
Input Capacitance
Ciss
V
V
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
1050
150
100
13
DS
DS
DS
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
43
Turn-OFF Delay Time
Fall Time
t (off)
d
76
t
f
48
Total Gate Charge
Qg
V
V
V
=20V, V =10V, I =6A
GS
20
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Qgs
Qgd
=20V, V =10V, I =6A
GS
3.3
4.5
0.84
D
=20V, V =10V, I =6A
GS
D
V
I =6A, V =0V
1.2
SD
S
GS
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
GS
--35
V
µA
µA
V
(BR)DSS
D
I
V
V
V
V
=--35V, V =0V
GS
--1
±10
--2.6
DSS
DS
GS
DS
DS
I
=±16V, V =0V
DS
GSS
V
(off)
GS
=--10V, I =--1mA
--1.2
4.5
D
Forward Transfer Admittance
yfs
⏐
=--10V, I =--5A
7.5
37
S
⏐
D
R
(on)1
I
D
I
D
=--5A, V =--10V
GS
49
87
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
Static Drain-to-Source On-State Resistance
R
(on)2
=--3A, V =--4V
GS
62
DS
Input Capacitance
Ciss
V
V
V
=--20V, f=1MHz
=--20V, f=1MHz
=--20V, f=1MHz
1200
190
140
13
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
47
Turn-OFF Delay Time
Fall Time
t (off)
d
101
69
t
f
Total Gate Charge
Qg
V
V
V
=--20V, V =--10V, I =--5A
GS
24
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
=--20V, V =--10V, I =--5A
GS
3.7
D
=--20V, V =--10V, I =--5A
GS
5.4
D
V
I =--5A, V =0V
S
--0.85
--1.5
SD
GS
Package Dimensions
unit : mm (typ)
Electrical Connection
7005-003
8
7
6
5
8
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
4
0.43
0.2
1
2
3
4
Top view
5.0
1.27
0.595
SANYO : SOP8
No. A0977-2/6
FW377
Switching Time Test Circuit
[N-channel]
[P-channel]
V =20V
DD
V
= --20V
DD
V
IN
V
IN
10V
0V
0V
--10V
I
=6A
I = --5A
D
R =4Ω
L
D
V
IN
V
IN
R =3.3Ω
L
D
V
OUT
D
V
OUT
PW=10µs
D.C.≤1%
PW=10µs
D.C.≤1%
G
G
FW377
FW377
P.G
P.G
50Ω
50Ω
S
S
I
-- V
I
-- V
GS
[Nch]
[Nch]
D
DS
D
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
12
11
10
9
V =10V
DS
8
7
6
5
4
3
2
V
=2.5V
GS
0.5
0
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
DS
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT13052
IT13051
R
(on) -- V
[Nch]
R (on) -- Ta
DS
[Nch]
DS
GS
90
80
70
60
50
40
30
20
80
70
60
50
40
30
20
Ta=25°C
I =3A
D
6A
10
0
10
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT13053
IT13054
GS
⏐y
fs⏐ -- I
[Nch]
I
-- V
[Nch]
D
S
SD
10
7
10
7
5
V
=0V
GS
V =10V
DS
5
3
2
3
2
1.0
7
5
1.0
7
3
2
C
°
5
0.1
7
5
3
2
a=75
T
3
2
0.1
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5 7
0.4
0.6
0.8
1.0
1.2
IT13056
0.01
0.1
1.0
10
IT13055
Drain Current, I -- A
Diode Forward Voltage, V -- V
SD
D
No. A0977-3/6
FW377
SW Time -- I
Ciss, Coss, Crss -- V
[Nch]
=20V
=10V
[Nch]
D
DS
5
3
2
V
V
f=1MHz
DD
GS
3
2
Ciss
1000
100
7
5
7
5
3
2
3
2
t (on)
d
100
10
7
5
7
5
0.1
2
3
5
7
2
3
5
7
0
5
10
15
20
25
30
35
1.0
10
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
DS
IT13057
IT13058
D
V
-- Qg
[Nch]
A S O
[Nch]
GS
10
9
5
V
=20V
I
=24A
PW≤10µs
DS
DP
3
2
I =6A
D
10
7
5
8
I
=6A
D
7
3
2
6
1.0
7
5
5
4
3
2
Operation in this
3
area is limited by R (on).
0.1
7
5
DS
2
Ta=25°C
3
2
1
0
Single pulse
Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5 7
0
0
0
5
10
15
20
25
0.1
1.0
Total Gate Charge, Qg -- nC
IT13059
Drain-to-Source Voltage, V
-- V
IT13060
DS
I
-- V
[Pch]
I
-- V
[Pch]
D
GS
D
DS
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--10
V
= --10V
DS
--9
--8
--7
--6
--5
--4
--3
--2
--0.5
0
--1
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
-- V
IT13062
GS
--4.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
IT13061
DS
R
DS
(on) -- Ta
[Pch]
R
DS
(on) -- V
[Pch]
GS
140
120
100
80
120
100
80
Ta=25°C
I = --3A --5A
D
60
60
40
40
20
0
20
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT13063
Ambient Temperature, Ta -- °C
IT13064
GS
No. A0977-4/6
FW377
I
-- V
[Pch]
=0V
⏐
y
fs⏐ -- I
[Pch]
S
SD
D
--10
10
V = --10V
DS
V
7
5
GS
7
5
3
2
3
2
--1.0
7
5
1.0
3
2
7
5
--0.1
7
5
3
2
3
2
0.1
--0.01
2
3
5
7
2
3
5
7
2
3
5 7
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--0.01
--0.1
--1.0
--10
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT13066
IT13065
D
SW Time -- I
D
[Pch]
Ciss, Coss, Crss -- V
[Pch]
DS
5
3
2
f=1MHz
V
= --20V
= --10V
DD
V
GS
3
2
Ciss
1000
100
7
5
7
5
3
2
3
2
t (on)
d
100
10
7
5
7
5
--0.1
0
--5
--10
--15
--20
--25
--30
--35
2
3
5
7
2
3
5
7
--1.0
--10
Drain-to-Source Voltage, V
-- V
Drain Current, I -- A
IT13067
IT13068
DS
D
A S O
V
-- Qg
[Pch]
[Pch]
GS
--10
5
V
= --20V
DS
3
2
I
= --20A
PW≤10µs
DP
--9
--8
--7
--6
--5
--4
--3
--2
I = --5A
D
--10
7
5
I = --5A
D
3
2
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
--0.1
7
5
DS
Ta=25°C
3
2
--1
0
Single pulse
Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
--10
-- V
2
3
5 7
0
5
10
15
20
25
IT13069
--0.1
--1.0
IT13070
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
DS
P
-- Ta
[Nch, Pch]
[Nch, Pch]
P (FET1) -- P (FET2)
D
D
D
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
Mounted on a ceramic board (1500mm2✕0.8mm)
Mounted on a ceramic board (1500mm2✕0.8mm)
PW≤10s
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
PW≤10s
0.4
0.2
0
0.2
0
0
20
40
60
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Ambient Temperature, Ta -- °C
IT13071
IT13072
Allowable Power Dissipation, P (FET2) -- W
D
No. A0977-5/6
FW377
Note on usage : Since the FW377 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of November, 2007. Specifications and information herein are subject
to change without notice.
No. A0977-6/6
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