ENA1114 [SANYO]
NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications; NPN外延平面硅晶体管超高频宽带低噪声放大器的应用
| 型号： | ENA1114 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1114
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise
Amplifier Applications
55GN01MA
Features
•
High cut-off frequency : f = 5.5GHz typ.
T
High gain : ⏐S21e⏐2=10dB typ (f=1GHz).
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
10
CBO
CEO
EBO
V
3
V
I
70
mA
mW
°C
°C
C
Collector Dissipation
P
When mounted on ceramic substrate (250mm2✕0.8mm)
400
150
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
0.1
1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
V
V
V
V
V
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
CE
CE
CB
CB
CE
CE
E
=2V, I =0A
EBO
C
h
=5V, I =10mA
100
180
FE
f 1
C
=3V, I =5mA
3.0
4.5
5.5
1.0
0.6
10
GHz
GHz
pF
T
C
Gain-Bandwidth Product
f 2
T
=5V, I =20mA
C
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Cob
Cre
=10V, f=1MHz
=10V, f=1MHz
1.3
2.8
pF
2
⏐
S21e
=5V, I =20mA, f=1GHz
7
dB
⏐
C
NF
=3V, I =5mA, f=1GHz, Z =50Ω
1.9
dB
C
o
Marking : ZD
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001677
No. A1114-1/6
55GN01MA
Package Dimensions
unit : mm (typ)
7023-009
0.3
0.15
3
0 to 0.1
1
2
0.65 0.65
0.3
0.6
0.9
2.0
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
I
-- V
I
-- V
BE
C
CE
C
50
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
V
CE
=5V
10
0
5
0
I =0mA
B
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-to-Emitter Voltage, V
-- V IT06252
Base-to-Emitter Voltage, V
BE
-- V
IT06253
CE
h
FE
-- I
f
-- I
C
T
C
3
2
10
V
CE
=5V
V
CE
=5V
7
5
3
2
100
7
5
1.0
1.0
2
3
5
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5
7
10
100
IT05670
1.0
10
100
Collector Current, I -- mA
IT06254
Collector Current, I -- mA
C
C
No. A1114-2/6
55GN01MA
Cob -- V
Cre -- V
CB
CB
5
5
f=1MHz
f=1MHz
3
2
3
2
1.0
1.0
7
5
7
5
3
0.1
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
0.1
1.0
10
1.0
10
Collector-to-Base Voltage, V
CB
-- V
IT05672
Collector-to-Base Voltage, V
-- V IT05673
CB
2
NF -- I
⏐S21e⏐ -- I
C
C
3.0
2.5
2.0
12
10
8
V
=3V
V
=5V
CE
CE
f=1GHz
f=1GHz
Zo=50Ω
6
1.5
1.0
4
2
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
IT05674
1.0
10
100
IT05671
Collector Current, I -- mA
Collector Current, I -- mA
C
C
P
-- Ta
C
450
400
350
300
250
200
150
100
When mounted on ceramic substrate
(250mm2✕0.8mm)
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT06251
No. A1114-3/6
55GN01MA
S Parameters (Common emitter)
V
=5V, I =5mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--43.97
--77.62
--117.92
--140.06
--155.07
--165.52
--174.34
178.04
171.32
164.86
158.60
152.58
146.68
141.54
136.46
131.80
S
∠S21
147.99
125.90
101.76
88.76
78.58
70.19
62.66
56.03
49.61
43.71
38.11
32.97
28.29
24.12
20.67
17.49
S
∠S12
67.23
54.39
48.13
49.82
52.28
54.96
56.81
58.15
58.43
58.38
58.17
57.40
56.02
55.05
53.73
51.74
S
⏐
22
∠S22
--22.91
--35.46
--44.05
--46.75
--49.83
--53.19
--57.17
--61.74
--66.69
--71.55
--76.75
--82.35
--87.23
--92.59
--98.30
--104.52
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.830
0.694
0.540
0.481
0.461
0.451
0.445
0.445
0.445
0.445
0.449
0.452
0.450
0.453
0.462
0.472
13.127
10.294
6.419
4.518
3.503
2.877
2.452
2.147
1.918
1.737
1.595
1.467
1.363
1.274
1.198
1.143
0.038
0.060
0.081
0.095
0.111
0.128
0.146
0.168
0.189
0.211
0.237
0.265
0.289
0.315
0.346
0.377
0.872
0.700
0.501
0.424
0.393
0.381
0.375
0.377
0.382
0.386
0.390
0.396
0.399
0.402
0.407
0.405
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
V
=5V, I =10mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--64.81
--103.63
--139.55
--156.47
--167.86
--175.67
177.29
171.08
165.63
159.97
154.44
148.97
143.60
139.13
134.54
130.40
S
∠S21
135.46
113.26
93.84
83.67
75.21
67.90
61.28
55.21
49.25
43.74
38.40
33.44
28.88
24.76
21.16
17.89
S
∠S12
61.46
54.93
56.90
60.27
62.42
63.30
63.24
62.62
61.52
60.43
58.94
57.20
55.14
53.64
51.96
49.84
S
⏐
22
∠S22
--32.56
--42.92
--45.97
--46.89
--49.45
--52.76
--56.97
--61.81
--66.89
--71.68
--76.83
--82.56
--86.87
--92.16
--97.67
--103.91
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.684
0.537
0.442
0.418
0.415
0.412
0.411
0.415
0.418
0.419
0.424
0.429
0.427
0.431
0.441
0.451
20.386
13.552
7.523
5.145
3.934
3.211
2.725
2.375
2.121
1.918
1.760
1.619
1.506
1.408
1.327
1.266
0.033
0.046
0.066
0.087
0.109
0.131
0.155
0.179
0.203
0.228
0.254
0.281
0.304
0.329
0.358
0.386
0.746
0.530
0.365
0.318
0.302
0.299
0.299
0.304
0.311
0.315
0.320
0.326
0.329
0.334
0.339
0.338
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
No. A1114-4/6
55GN01MA
S Parameters (Common emitter)
V
=5V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--90.16
--127.59
--155.68
--167.56
--176.18
177.84
172.13
166.95
162.22
157.06
152.07
146.91
141.87
137.61
133.38
129.47
S
∠S21
123.28
104.33
89.00
80.60
73.14
66.41
60.19
54.45
48.82
43.51
38.32
33.45
29.00
24.92
21.39
18.07
S
∠S12
59.94
60.44
65.69
67.76
68.31
67.71
66.77
65.32
63.20
61.52
59.51
57.59
55.28
53.54
51.63
49.39
S
⏐
22
∠S22
--40.43
--45.63
--44.29
--44.57
--47.52
--51.39
--55.96
--61.04
--66.49
--71.29
--76.53
--82.27
--86.65
--91.76
--97.07
--103.60
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.527
0.438
0.399
0.393
0.397
0.398
0.401
0.406
0.411
0.414
0.419
0.425
0.424
0.429
0.438
0.449
26.224
15.340
8.065
5.453
4.149
3.379
2.862
2.491
2.222
2.008
1.840
1.693
1.574
1.472
1.387
1.321
0.026
0.037
0.060
0.084
0.109
0.134
0.159
0.186
0.210
0.235
0.261
0.288
0.312
0.336
0.365
0.392
0.598
0.396
0.282
0.256
0.250
0.252
0.255
0.262
0.270
0.275
0.282
0.289
0.293
0.298
0.304
0.303
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
V
=5V, I =30mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--105.76
--139.73
--162.64
--172.24
--179.58
175.18
169.95
165.14
160.67
155.72
150.84
145.91
140.96
136.73
132.49
128.65
S
∠S21
117.59
100.76
87.05
79.25
72.10
65.52
59.47
53.81
48.20
42.96
37.78
32.98
28.60
24.51
21.02
17.72
S
∠S12
60.62
64.40
69.84
70.67
70.59
69.45
68.00
66.24
64.03
62.33
60.20
58.16
55.69
53.89
52.12
49.72
S
⏐
22
∠S22
--42.88
--44.71
--41.81
--42.42
--45.80
--49.94
--54.75
--60.09
--65.80
--70.89
--76.12
--81.97
--86.52
--91.68
--97.10
--103.63
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.461
0.412
0.393
0.394
0.400
0.401
0.405
0.412
0.417
0.422
0.428
0.434
0.433
0.438
0.447
0.459
28.111
15.717
8.133
5.483
4.169
3.392
2.870
2.496
2.226
2.010
1.841
1.692
1.574
1.469
1.384
1.319
0.023
0.034
0.058
0.084
0.110
0.135
0.161
0.187
0.212
0.237
0.263
0.291
0.314
0.339
0.367
0.395
0.521
0.344
0.255
0.237
0.235
0.239
0.244
0.252
0.260
0.267
0.275
0.282
0.286
0.291
0.298
0.298
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
No. A1114-5/6
55GN01MA
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1114-6/6
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