ENN8044 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用型号: | ENN8044 |
厂家: | SANYO SEMICON DEVICE |
描述: | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
文件: | 总4页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENN8044
N-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
FSS802
Features
•
Low ON-resistance.
•
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
30
±20
12
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
I
A
D
D
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
duty cycle≤1%
duty cycle≤1%
14
A
I
52
A
DP
P
Mounted on a ceramic board (1200mm2✕0.8mm) PW≤10s
3.0
150
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=30V, V =0
GS
1
DSS
DS
GS
DS
DS
I
=±16V, V =0
DS
±10
GSS
V (off)
GS
=10V, I =1mA
1.2
9.6
2.6
D
Forward Transfer Admittance
yfs
=10V, I =12A
16
9
S
D
R
(on)1
I
D
I
D
I
D
=12A, V =10V
GS
13
21
26
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=6A, V =4.5V
GS
14
=6A, V =4V
GS
17
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
2300
430
300
17
DS
DS
DS
Coss
Crss
t (on)
d
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
t
r
200
150
130
ns
Turn-OFF Delay Time
Fall Time
t (off)
d
ns
t
f
ns
Marking : S802
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71504 TS IM TB-00000482 No.8044-1/4
FSS802
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
33
5
max
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =10V, I =12A
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=10V, V =10V, I =12A
GS
D
=10V, V =10V, I =12A
GS
6
D
V
SD
I =12A, V =0
S
0.81
1.2
GS
Package Dimensions
unit : mm
Switching Time Test Circuit
2116
V
=15V
DD
8
5
V
IN
I
=12A
L
D
10V
0V
R =1.25Ω
V
V
IN
D
OUT
1 : Source
2 : Source
3 : Source
4 : Gate
PW=10µs
D.C.≤1%
G
1
4
0.2
5.0
5 : Drain
6 : Drain
7 : Drain
8 : Drain
P. G
50Ω
FSS802
S
1.27
0.595
0.43
SANYO : SOP8
I
-- V
I
-- V
D
DS
D
GS
10
8
18
16
14
12
10
8
V
=10V
DS
6
4
6
4
2
0
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT04076
IT04075
Gate-to-Source Voltage, V -- V
GS
Drain-to-Source Voltage, V
-- V
DS
GS
R
(on) -- V
DS
R
(on) -- Ta
DS
30
25
20
15
10
50
45
40
35
30
25
20
15
10
Ta=25°C
I =6A
D
12A
5
0
5
0
--60 --40 --20
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
14
16
IT04077
Ambient Temperature, Ta -- °C
IT04078
Gate-to-Source Voltage, V
GS
-- V
No.8044-2/4
FSS802
yfs -- I
I
-- V
SD
D
F
5
5
3
2
V
=0
V
=10V
GS
DS
3
2
10
7
5
3
2
10
1.0
7
7
5
5
3
2
0.1
7
3
2
5
3
2
0.01
7
1.0
5
3
2
7
5
0.001
0.2
2
3
5
7
2
3
5
7
2
3
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10
Drain Current, I -- A
IT04079
IT04080
Diode Forward Voltage, V
-- V
D
SD
Qg -- V
GS
Ciss, Coss, Crss -- V
DS
10
9
8
7
6
5
4
3
2
1
0
10000
f=1MHz
V
=10V
=12A
DS
7
5
I
D
3
2
1000
7
5
3
2
100
30
IT07598
15
20
25
30
35
IT04082
0
5
10
15
20
25
0
5
10
Drain-to-Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
A S O
SW Time -- I
D
1000
100
7
≤10µs
I
=52A
=12A
V
V
=15V
=10V
GS
7
5
DP
DD
5
3
2
3
2
I
D
10
7
5
100
7
5
t
f
3
2
1.0
7
5
3
2
t (on)
d
Operation in this
area is limited by R (on).
3
2
DS
10
7
5
0.1
7
5
3
2
Ta=25°C
Single pulse
3
2
Mounted on a ceramic board (1200mm2✕0.8mm)
0.01
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
1.0
10
0.01
0.1
1.0
10
Drain-to-Source Voltage, V
-- V
IT07985
Drain Current, I -- A
IT04083
DS
D
P
-- Ta
D
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT04085
No.8044-3/4
FSS802
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2004. Specifications and information herein are subject
to change without notice.
PS
No.8044-4/4
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