概述
规格参数
数据手册FTD2013 概述
Load Switching Applications 负载开关应用 小信号场效应晶体管
FTD2013 规格参数
| 生命周期： | Obsolete | 零件包装代码： | TSSOP |
| 包装说明： | SMALL OUTLINE, R-PDSO-G8 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.84 | 配置： | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 30 V | 最大漏极电流 (Abs) (ID)： | 4.5 A |
| 最大漏极电流 (ID)： | 4.5 A | 最大漏源导通电阻： | 0.035 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-PDSO-G8 |
| 元件数量： | 2 | 端子数量： | 8 |
| 工作模式： | ENHANCEMENT MODE | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 0.8 W |
| 认证状态： | Not Qualified | 子类别： | FET General Purpose Power |
| 表面贴装： | YES | 端子形式： | GULL WING |
| 端子位置： | DUAL | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
FTD2013 数据手册
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PDF下载Ordering number:ENN6080A
N-Channel Silicon MOSFET
FTD2013
Load Switching Applications
Features
Package Dimensions
unit:mm
· Low ON resistance.
· 2.5V drive.
2155A
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
[FTD2013]
0.425
3.0
0.65
8
5
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
1
4
0.125
0.25
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Specifications
SANYO : TSSOP8
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
V
Drain-to-Source Voltage
V
30
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
±10
V
GSS
I
4.5
A
D
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
I
PW≤10µs, duty cycle≤1%
20
0.8
A
DP
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
P
D
P
T
W
W
˚C
˚C
1.3
Channel Temperature
Storage Temperature
Tch
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
D GS
30
V
µA
µA
V
(BR)DSS
I
V
V
V
V
I
=30V, V =0
1
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0
DS
=10V, I =1mA
D
=10V, I =4.5A
D
±10
1.3
GSS
V
0.5
7
GS(off)
| yfs |
Forward Transfer Admittance
10
S
R
1
=4.5A, V =4V
GS
25
34
35
48
mΩ
mΩ
pF
pF
pF
DS(on)
D
Static Drain-to-Source On-State Resistance
R
2
I
=2A, V =2.5V
D GS
DS(on)
Ciss
Input Capacitance
V
V
V
=10V, f=1MHz
1000
185
135
DS
Output Capacitance
Reverse Transfer Capacitance
Marking : D2013
Coss
Crss
=10V, f=1MHz
DS
=10V, f=1MHz
DS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52200TS (KOTO) TA-2589 No.6080–1/4
FTD2013
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
t
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
16
ns
ns
ns
ns
nC
nC
nC
V
d(on)
t
100
140
110
32
r
Turn-OFF Delay Time
Fall Time
t
d(off)
t
f
Qg
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Qgs
Qgd
V
=10V, V =10V, I =4.5A
GS
1.5
DS
D
6
V
I =4.5A, V =0
GS
0.82
1.2
SD
S
Switching Time Test Circuit
Electrical Connection
V
=15V
DD
V
IN
D2 S2 S2 G2
4V
0V
I =4.5A
D
V
IN
R =3.3Ω
L
PW=10µs
D.C.≤1%
D
V
OUT
G
FTD2013
P.G
50Ω
S
D1 S1 S1 G1
I
-
V
I
- V
GS
D
DS
D
10
10
9
V
=10V
DS
9
8
7
6
5
4
3
2
3.5V
3.0V
2.5V
2.0V
8
7
6
5
4
3
2
1
0
1
0
V
=1.0V
GS
2.5
0
0.5
1.0
1.5
2.0
3.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain-to-Source Voltage, V
– V
Gate-to-Source Voltage, V
GS
– V
DS
R
Ta
R
V
GS
DS(on)
DS(on)
60
50
40
30
20
60
50
40
30
20
Ta=25°C
I
=4.5A
D
I =2A
D
10
0
10
0
0
2
4
6
8
10
12
-50
-25
0
25
50
75
100
125
150
Ambient Temperature, Ta – °C
Gate-to-Source Voltage, V
GS
– V
No.6080-2/4
FTD2013
y
| fs |
- I
I
V
SD
D
F
2
100
7
V
=10V
V
=0
DS
GS
10
7
5
5
3
2
3
2
1.0
7
5
10
7
3
2
5
0.1
7
5
3
2
3
2
1.0
0.1
0.01
0.2 0.3
2
3
5
7
2
3
5
7
2
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.0
10
Drain Current, I – A
Diode Forward Voltage, V
SD
– V
D
Ciss, Coss, Crss
V
DS
V
GS
Qg
10000
10
f=1MHz
V
=10V
DS
7
5
9
8
7
6
5
4
3
2
I
=4.5A
D
3
2
Ciss
1000
7
5
3
2
100
7
5
3
2
1
0
10
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
30
35
Total Gate Charge, Qg
–
nC
Drain-to-Source Voltage, V
– V
DS
SW Time
-
I
A S O
D
1000
5
V
V
=10V
=4V
DD
GS
7
5
3
2
I
=20A
<10µs
100µs
DP
3
2
10
7
5
I =4.5A
D
100
7
3
2
5
1.0
7
5
3
2
t
d(on)
3
2
Operation in this area
is limited by R (on).
10
7
5
DS
0.1
57 Ta=25˚C
1pulse
3
2
23 1unit
0.01 Mounted on a ceramic board (1000mm2×0.8mm)
1.0
0.1
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
10
2
3
5
1.0
10
0.1
1.0
Drain-to-Source Voltage, V
DS
– V
Drain Current, I – A
D
P
- Ta
D
1.6
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
00Mounted on a ceramic board (1000mm2×0.8mm)
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – °C
No.6080-3/4
FTD2013
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2000. Specifications and information herein are subject to
change without notice.
PS No.6080-4/4
FTD2013 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FTD2014 | SANYO | Load Switching Applications | 获取价格 |
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| FTD2015 | SANYO | Load Switching Applications | 获取价格 |
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| FTD2016 | ETC | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | TSSOP | 获取价格 |
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| FTD2017 | SANYO | Load Switching Applications | 获取价格 |
|
| FTD2017C | SANYO | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | 获取价格 |
|
| FTD2017C-TL | ONSEMI | TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,6A I(D),TSSOP | 获取价格 |
|
| FTD2017CTL | ONSEMI | Power Field-Effect Transistor, 6A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, TSSOP-8 | 获取价格 |
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| FTD2017M | SANYO | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | 获取价格 |
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| FTD2017R | SANYO | N-Channel Silicon MOSFET General-Purpose Switching Device | 获取价格 |
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| FTD2019 | SANYO | Load Switching Applications | 获取价格 |
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