FX510 [SANYO]
High-Current Switching Applications; 大电流开关应用
| 型号： | FX510 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Current Switching Applications |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:EN5030
FX510
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Features
Package Dimensions
unit:mm
· Composite type with 2PNP transistors contained in
one package, facilitating high-density mounting.
· The FX510 houses two chips, each being equivalent
to the 2SA1552, in one package.
2118
[FX510]
· Matched pair characteristics.
1:Base1
2:Emitter1
3:Emitter2
4:Base2
5:Collector2
6:Collector1
SANYO:XP6
(Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Base1
2:Emitter1
3:Emitter2
4:Base2
5:Collector2
6:Collector1
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
–180
–160
–6
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
V
CEO
V
EBO
I
–1.5
–2.5
–0.3
1.5
A
C
Collector Current (Pulse)
Base Current
I
A
CP
I
A
B
Mounted on ceramic board (750mm2×0.8mm) 1unit
Mounted on ceramic board (750mm2×0.8mm)
Collector Dissipation
Total Dissipation
P
C
P
T
W
W
˚C
˚C
2
Junction Temperature
Storage Temperature
Tj
150
Tstg
–55 to +150
· Marking:510
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42695MO (KOTO) TA-0097 No.5030-1/4
FX510
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
–1
I
V
V
V
V
V
=–120V, I =0
E
=–4V, I =0
C
µA
µA
CBO
CB
EB
CE
CE
CE
Emitter Cutoff Current
DC Current Gain
I
–1
EBO
h
h
1
=–5V, I =––100mA
C
=–5V, I =–10mA
140
400
FE
FE
2
80
C
DC Current Gain Ratio
h
=–5V, I =–100mA
C
0.8
FE(small/
large)
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
f
V
V
I
=–10V, I =–100mA
C
=–10V, f=1MHz
150
22
MHz
pF
mV
V
T
CE
CB
Cob
V
=–500mA, I =–50mA
B
=–500mA, I =–50mA
B
=–10µA, I =0
E
–200
–0.85
–500
–1.2
CE(sat)
BE(sat)
C
V
I
I
I
C
C
C
V
V
V
–180
–160
–6
V
(BR)CBO
(BR)CEO
(BR)EBO
=–1mA, R =∞
V
BE
I =–10µA, I =0
V
E
C
t
See sepcified Test Circuit
See sepcified Test Circuit
See sepcified Test Circuit
60
700
50
ns
ns
ns
on
Storage Time
t
stg
t
f
Fall Time
No.5030-2/4
FX510
No.5030-3/4
FX510
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5030-4/4
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