LB11975 [SANYO]
High-Speed CD-ROM Spindle Motor Driver IC; 高速CD -ROM主轴电机驱动器IC
| 型号： | LB11975 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Speed CD-ROM Spindle Motor Driver IC |
| 文件： | 总12页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN6497A
Monolithic Digital IC
LB11975
High-Speed CD-ROM Spindle Motor Driver IC
Overview
Package Dimensions
The LB11975 is a monolithic bipolar IC developed for
uses as a spindle motor driver for high-speed CD-ROM
and DVD-ROM drives. To minimize heat generation
during high-speed rotation and braking, the LB11975
adopts direct PWM drive in the output stage. During
reverse braking the upper and lower side output transistors
are both driven in PWM mode to implement dual PWM
controlled braking. The device thus controls the current to
remain under a limit value and prevent rapid heat
generation. This prevents device destruction due to rapid
heating. The absolute maximum voltage rating is 27 V,
and the maximum current is 2.5 A.
unit: mm
3251-HSOP36R
[LB11975]
17.8
(6.2)
36
19
1
18
0.25
2.0
(0.5)
0.3
0.8
Functions and Features
• Direct PWM drive (lower side control)
• Built-in upper and lower side output diodes
• Supports the use 3.3 V DSP devices.
• Power saving function for standby mode
• Hall FG output (1 or 3 Hall device operation)
• Built-in Hall device power supply
• Reverse rotation detection output and drive cutoff circuit
• Voltage control amplifier
2.7
SANYO: HSOP36R
Pd max — Ta
2.4
Mounted on the specified printed circuit
(114.3 × 76.1 × 1.6 mm3 glass epoxy board)
2.1
2.0
• Current limiter circuit
• Thermal protection circuit
1.6
1.2
1.26
Independent IC
0.9
0.8
0.54
80
0.4
0
–20
0
20
40
60
100
Ambient temperature, Ta — °C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11201RM (OT) No. 6497-1/12
LB11975
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Supply voltage 1
Symbol
VCC1 max
VCC2 max
VCC3 max
IO max
Conditions
Ratings
Unit
V
7
27
27
Supply voltage 2
V
Supply voltage 3
V
Output current
2.5
30
A
Output applied voltage
Allowable power dissipation 1
VIN max
V
Pd max1
Independent IC
0.9
W
Mounted on the specified circuit board
(114.3 × 76.1 × 1.6 mm3 glass epoxy board)
Allowable power dissipation 2
Pd max2
2.1
W
Operating temperature
Storage temperature
Topr
Tstg
–20 to +75
°C
°C
–55 to +150
Allowable Operating Ranges at Ta = 25°C
Parameter
Power-supply voltage range 1
Power-supply voltage range 2
Power-supply voltage range 3
FG pin applied voltage
Symbol
Conditions
Ratings
4 to 6
Unit
V
VCC
VCC
VCC
1
2
3
VCC2 ≥ VCC
1
4 to 16
4 to 16
V
V
VFG
IFG
0 to VCC
1
V
FG pin output current
0 to 4.0
mA
Electrical Characteristics at Ta = 25°C, V 1 = 5 V, V 2 = V = 12 V
CC
CC
S
Ratings
Parameter
Symbol
CC1-1
Conditions
Unit
min
5.0
typ
8.0
0
max
11.0
I
VCTL = VCREF
VS/S = 0 V
mA
µA
Supply current 1
ICC1-2
ICC2-1
ICC2-2
ICC3-1
ICC3-2
200
8.0
VCTL = VCREF
VS/S = 0 V
5.0
6.5
0
mA
µA
Supply current 2
200
0.7
VCTL = VCREF
VS/S = 0 V
0.3
0
mA
µA
Supply current 3
200
[Output Block]
VOsat1(L) IO = 0.5 A, VO(sink), VCC1 = 5 V, VCC2 = VCC3 = 12 V
VOsat1(H) IO = 0.5 A, VO(source), VCC1 = 5 V, VCC2 = VCC3 = 12 V
VOsat2(L) IO = 1.5 A, VO(sink), VCC1 = 5 V, VCC2 = VCC3 = 12 V
VOsat2(H) IO = 1.5 A, VO(source), VCC1 = 5 V, VCC2 = VCC3 = 12 V
IOleak(L)
0.15
0.80
0.40
1.10
0.25
0.95
0.60
1.30
100
V
V
Output saturation voltage 1
V
Output saturation voltage 2
Output leakage current
Diode forward voltage
V
µA
µA
V
IOleak(H)
–100
VFH
VFL
Upper side diode, IO = 2.0 A
Lower side diode, IO = 2.0 A
1.50
1.50
2.00
2.00
V
[Hall Amplifier Block]
Input bias current
IHB
VICM
–4
1.5
60
–1
µA
V
Common-mode input voltage range
Hall input sensitivity
Hysteresis
VCC – 1.5
VHIN
mVp-p
mV
∆VIN(HA)
23
32
16
39
25
–6
Input voltage: low → high
Input voltage: high → low
[Thermal Protection Circuit]
Operating temperature
Hysteresis
VSL
H
6
mV
VSL
L
–25
–16
mV
T-TSD
Design target value (junction temperature) *
Design target value (junction temperature) *
150
180
40
210
°C
°C
∆TSD
Continued on next page.
Note: * These are design target values and are not tested.
No. 6497-2/12
LB11975
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[PWM Oscillator]
High-level output voltage
Low-level output voltage
Amplitude
VOH(OSC)
VOL(OSC)
V(OSC)
3.1
3.3
1.6
3.5
V
V
1.4
1.5
1.8
1.9
1.7
Vp-p
kHz
µA
Oscillator frequency
Charge current
f(OSC) C = 2200 pF
ICHG
23.0
–94
2.1
–110
1.6
–83
2.6
Charge resistor value
[CTL Amplifier]
RDCHG
kΩ
VCTL pin input current
VCREF pin input current
Forward rotation gain
Reverse rotation gain
Forward rotation limiter voltage
Reverse rotation limiter voltage
Startup voltage
IVCTL
IVCREF
GDF+
GDF–
VCTL = VCREF = 1.65 V
VCTL = VCREF = 1.65 V
–2
–2
µA
µA
Design target value *
Design target value *
0.20
–0.30
0.26
0.26
1.50
35
0.25
–0.25
0.29
0.30
–0.20
0.32
0.32
1.80
140
times
times
V
VRF
VRF
1
2
0.29
V
VCTH
VDZ
VCREF = 1.65 V. Design target value *
VCREF = 1.65 V. Design target value *
V
Dead zone
80
10
mV
[FG Pin] (speed pulse output)
Low-level output voltage
Pull-up resistor value
[RS Pin]
VFGL
RFG
IFG = 2 mA
IRS = 2 mA
0.4
V
7.5
7.5
12.5
kΩ
Low-level output voltage
Pull-up resistor value
[Stop/Start Pin]
VRSL
RRS
0.4
V
10
0
12.5
kΩ
Low-level input voltage
High-level input voltage
Low-level input current
High-level input current
[Hall Device Power Supply]
Hall device supply voltage
Allowable current
VSS
VSS
ISS
ISS
L
0.7
V
V
H
2.0
–1
VCC1
L
VSS = 0 V
0
µA
µA
H
VSS = 5.0 V
50
200
VH
IH
IH = 5 mA
0.65
0.85
1.05
20
V
mA
Note: * These are design target values and are not tested.
Truth Table
Input
IN2
Control voltage VCTL
Output
FG output
FG1 FG2
IN1
H
IN3
H
Source → Sink
OUT2 → OUT1
OUT1 → OUT2
OUT3 → OUT1
OUT1 → OUT3
OUT3 → OUT2
OUT2 → OUT3
OUT1 → OUT2
OUT2 → OUT1
OUT1 → OUT3
OUT3 → OUT1
OUT2 → OUT3
OUT3 → OUT2
H
L
1
2
3
4
5
6
L
L
L
H
H
L
H
H
L
L
L
L
L
L
H
L
H
L
H
H
H
L
H
L
L
H
H
H
H
L
L
H
H
H
L
H
L
L
FG1
FG2
No. 6497-3/12
LB11975
Block Diagram
No. 6497-4/12
LB11975
Pin Assignment
OUT2
OUT2
OUT3
OUT3
OUT1
OUT1
1
2
3
4
5
6
7
8
9
36
35
34
33
32
31
30
29
28
NC
NC
NC
NC
GND2
GND2
GND2
GND2
V
V
3
V
3
CC
CC
CC
LB11975
2
RF
FRAME
GND
FRAME
GND
FR
FR
PWM
FC
V
1
CC
10
11
12
13
14
15
16
17
18
27
26
25
24
23
22
21
20
19
FG1
FG2
RS
PH
V
CREF
V
IN1+
IN1-
IN2+
IN2-
IN3+
CTL
S/S
VH
GND1
IN3-
Top view
No. 6497-5/12
LB11975
Sample Application Circuit
No. 6497-6/12
LB11975
Pin Functions
Pin No.
9
Pin
CC2
Pin voltage
4 V to 16 V
Function
Equivalent circuit
Supplies the source side pre-drive
voltage.
V
8
VCC
3
4 V to 16 V
4 V to 16 V
Supplies the motor drive voltage.
29
Supply voltage for all circuits other than
the output transistors and the source side
pre-drive voltage
VCC1
27
24
26
25
Reverse rotation detection
High-level output: Forward rotation
Low-level output: Reverse rotation
RS
V
1
CC
10kΩ
24 25 26
Single Hall device waveform Schmitt
comparator synthesized output
FG1
FG2
Three Hall device waveform Schmitt
comparator synthesized output
IN1+
IN1–
IN2+
IN2–
IN3+
IN3–
23
22
21
20
19
18
U phase Hall device input.
Logic high refers to the state where IN1+
> IN1–.
V
1
CC
V phase Hall device input.
Logic high refers to the state where IN2+
> IN2–.
1.5 V to
CC1 – 1.5 V
19
21
23
18
V
500Ω
500Ω
20
22
W phase Hall device input.
Logic high refers to the state where IN3+
> IN3–.
V
1
CC
16
Provides the Hall device lower side bias
voltage.
16
VH
30kΩ
2kΩ
V
1
CC
All circuits can be set to the non-operating
state by setting this pin to 0.7 V or under,
or by setting it to the open state.
75kΩ
50kΩ
15
0 V to VCC1
15
17
S/S
This pin must be held at 2 V or higher.
GND1
Ground for all circuits except the output
Continued on next page.
No. 6497-7/12
LB11975
Continued from preceding page.
Pin No.
Pin
Pin voltage
Function
Equivalent circuit
Control loop frequency characteristics
correction
V
1
CC
11
10
Closed loop oscillation in the current
control system can be stopped by
connecting a capacitor between this pin
and ground.
11
FC
500Ω
500Ω
500Ω
2kΩ
65kΩ
10
13
PWM
PWM oscillator capacitor connection
Control reference voltage input
V
1
CC
0 V to
CC1 – 1.5 V
VCREF
The control start voltage is determined by
this voltage.
V
Speed control voltage input
This IC implements a voltage control
system in which VC > VCREF means
forward rotation and VC < VCREF means
slow foward rotation.
500Ω
500Ω
14
13
0 V to
CC1 – 1.5 V
VCTL
14
V
(This IC includes reverse rotation
prevention circuit, so reverse rotation will
not occur.)
3, 4
OUT3
GND2
W phase output
V
1
6, 7
V
3
CC
CC
Ground for the output transistors
V
2
CC
30, 31
28
1
1, 2
OUT2
OUT1
V phase output
U phase output
35, 36
2kΩ
2kΩ
2
3
4
Upper side npn transistor collector
(shared by all three phases)
35 36
Connect a resistor between VCC3 and the
RF pin for current detection. The fixed
current control system and the current
limiter operate by detecting this voltage.
28
RF
6
7
30 31
V
1
CC
Peak hold circuit capacitor connection.
12
PH
300Ω
Connect a capacitor to this pin to smooth
the voltage detected by the resistor RF.
12
11kΩ
No. 6497-8/12
LB11975
Torque Command
Figure 1 shows the relationship between the control voltage (V
) and the RF voltage.
CTL
Forward rotation
V
RF
Dead zone
Offset voltage
VCREF=1.65V
3mV
1.65V
V
CTL
Figure 1
Truth Table
Operation
VCTL > VCREF
VCREF > VCTL
Forward rotation
Reverse torque braking *
Note: * Since this IC includes a reverse rotation prevention circuit, although the IC will brake the motor if the motor is rotating and VCTL < VCREF, when
reverse rotation is detected, the IC will turn the output off, thus stopping motor rotation.
Reverse Rotation Detection Circuit Truth Table
RS pin
Forward rotation
Reverse rotation
HIGH
LOW
D
IN1+
OUT
During forward rotation:
CK
Q
Q
Q
R
IN1–
The OUT signal is set high to reset DFF.
During reverse rotation:
D
IN2+
IN2–
Reverse rotation is detected when the Hall comparator output falls.
At that point the OUT signal is set to the low level.
CK
R
R
D
IN3+
IN3–
CK
V
CTL
V
CREF
Figure 2 Reverse Rotation Detection Circuit Block Diagram
No. 6497-9/12
LB11975
Hall comparator
(IN1, IN2, and IN3)
waveforms
IN1
IN2
IN3
Reverse rotation is detected with this timing.
Figure 3 Reverse Rotation Timing Chart
Overview of Reverse Torque Braking
(This circuit uses a direct PWM drive technique and allows the current limiter to operate during reverse torque braking.)
In earlier direct PWM motor drivers, speed control was implemented by applying PWM to only one (either the upper or
lower) output transistor. With this type of driver, the regenerative current formed during reverse torque braking operated
as a short-circuit braking. As a result problems such as the coil current exceeding the limit value and I max being
O
exceeded, would occur. To prevent these problems, the LB11975 switches both the upper and lower side output
transistors during reverse torque braking to suppress the generation of overcurrents due to regenerative currents when the
PWM is off and allows the optimal design of drive currents.
Supplementary Documentation
Coil current during reverse torque braking
(1) Earlier ICs, with the lower side transistor was switched and the upper side transistor used for current detection (RF)
During reverse torque braking, when the coil current increases and the limit is reached, the lower side output
transistor is turned off. At this time the regenerative current flows through the upper side transistor. The circuit path is
as follows:
Coil → upper side diode → V → RF → upper side transistor → coil
CC
During regeneration, the upper side transistor is on and the back EMF that occurs at the upper side transistor’s emitter
pin has a low potential, and since the upper side transistor is fully on at that point, the circuit functions as short-circuit
braking.
Even if the regenerative current results in the RF voltage reaching the limit voltage, since the upper side transistor
cannot be turned off, the limit circuit will not operate and a coil current in excess of I max may occur.
O
(2) Earlier ICs, with the upper side transistor was switched and the upper side transistor used for current detection (RF)
During reverse torque braking, when the coil current increases and the limit is reached, the upper side output
transistor is turned off. At this time the regenerative current flows through the lower side transistor. The circuit path is
as follows:
Coil → lower side transistor → ground → lower side diode → coil
During regeneration, the lower side transistor is on and the back EMF that occurs at the lower side transistor’s
collector pin has a high potential, and since the lower side transistor is fully on at that point, the circuit functions as
short-circuit braking.
Since the regenerative current does not flow through the RF pin, the current limiter circuit does not operate, and a
current in excess of I max may occur in the lower side transistor.
O
No. 6497-10/12
LB11975
(3) When both the upper and lower side transistors are switched and current detection (RF) is performed in the upper side
transistor
During reverse torque braking, when the coil current increases and the limit is reached, both the upper and lower side
transistors are turned off. The motor current circuit path at this point is as follows:
Coil → upper side diode → V → power supply line capacitor → ground → lower side diode → coil
CC
When the limiter circuit operates, both the upper and lower side transistors are turned off, so short-circuit breaking
does not occur, and coil current attenuation is all that occurs. Thus this technique allows current control at the set
(limiter) current to be performed even during reverse torque braking.
Regenerative Current Path
RF
+
–
A13187
Drive Mode
No. 6497-11/12
LB11975
Braking Mode
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products (including technical data, services) described or contained
herein are controlled under any of applicable local export control laws and regulations, such products must
not be exported without obtaining the export license from the authorities concerned in accordance with the
above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.
PS No. 6497-12/12
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