MCH3456_06 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | MCH3456_06 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8162A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
MCH3456
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
15
±10
1.8
DSS
GSS
V
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)
7.2
A
DP
P
0.8
W
°C
°C
D
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
15
V
µA
µA
V
(BR)DSS
D GS
I
I
V
V
V
V
=15V, V =0V
GS
1
DSS
GSS
DS
GS
DS
DS
=±8V, V =0V
DS
±10
V
(off)
GS
=10V, I =1mA
0.4
1.5
1.3
D
Forward Transfer Admittance
yfs
=10V, I =1A
2.6
120
165
230
310
105
30
S
D
R
(on)1
DS
(on)2
DS
(on)3
DS
(on)4
DS
I
D
I
D
I
D
I
D
=1A, V =4V
GS
160
240
350
750
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
R
R
R
=0.5A, V =2.5V
GS
Static Drain-to-Source On-State Resistance
=0.1A, V =1.8V
GS
=0.1A, V =1.5V
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
DS
DS
DS
Coss
Crss
24
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
7.8
27
t
r
ns
Turn-OFF Delay Time
Fall Time
t (off)
d
18
ns
t
f
22
ns
Marking : LH
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 12006PE MS IM TB-00002043 / D1504PE TS IM TB-00000382 No.8162-1/4
MCH3456
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =4V, I =1.8A
1.86
0.33
0.55
0.88
nC
nC
nC
V
DS
DS
DS
GS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=10V, V =4V, I =1.8A
GS
D
=10V, V =4V, I =1.8A
GS
D
V
SD
I =1.8A, V =0V
S
1.2
GS
Package Dimensions
unit : mm
Switching Time Test Circuit
7019A-003
V
=10V
V
DD
IN
4V
0V
0.15
2.0
I
=1A
3
D
V
IN
R =10Ω
L
0 to 0.02
D
V
OUT
PW=10µs
D.C.≤1%
1
2
G
0.65
0.3
MCH3456
P.G
50Ω
S
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
I
-- V
I
-- V
D
DS
D
GS
1.6
1.2
0.8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
=10V
DS
0.4
0
V
GS
=1.0V
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT08578
IT08577
DS
R
(on) -- V
R (on) -- Ta
DS
DS
GS
400
350
300
250
200
150
100
400
350
300
250
200
150
100
Ta=25°C
0.5A
1.0A
I =0.1A
D
50
0
50
0
0
1
2
3
4
5
6
7
8
9
10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT08579
IT08580
No.8162-2/4
MCH3456
y
fs -- I
I -- V
S SD
D
3
2
7
5
V
=10V
V
=0V
DS
GS
1.0
3
2
7
5
3
2
1.0
7
5
0.1
7
5
3
2
3
2
0.01
0.4
0.1
0.01
2
3
5
7
2
3
5
7
1.0
2
3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
IT08582
0.1
Drain Current, I -- A
IT08581
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
3
2
V
V
=10V
=4V
f=1MHz
DD
GS
100
7
5
Ciss
100
3
2
7
5
t (on)
d
10
7
5
3
2
3
2
10
1.0
0.01
2
3
5
7
2
3
5
7
2
3
0
2
4
6
8
10
12
14
16
0.1
1.0
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT08584
IT08583
D
DS
A S O
V
GS
-- Qg
2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
=10V
DS
I
=7.2A
10
7
5
<10µs
DP
I =1.8A
D
3
2
I =1.8A
D
1.0
7
5
3
2
Operation in this
0.1
7
5
area is limited by R (on).
DS
3 Ta=25°C
Single pulse
0.5
0
2
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2 3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10
Drain-to-Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
IT08695
IT08585
DS
P
D
-- Ta
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT08696
No.8162-3/4
MCH3456
Note on usage : Since the MCH3456 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
PS No.8162-4/4
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