MCH3914-8-TL-H [SANYO]
High-Frequency Amplifier, Analog Switch Applications;
| 型号： | MCH3914-8-TL-H |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Amplifier, Analog Switch Applications |
| 文件： | 总6页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1511A
SANYO Sem iconductors
DATA S HEET
N-Channel Junction Silicon FET
High-Frequency Amplifier,
Analog Switch Applications
MCH3914
Features
•
yfs is large
Ciss is small
Small package
FBET process
|
|
•
•
•
•
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Symbol
Conditions
Ratings
Unit
V
V
15
--15
5
DSX
V
V
GDS
I
mA
mA
mW
°C
G
Drain Current
I
50
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
When mounted on ceramic substrate (600mm2 0.8mm)
300
150
×
D
Tj
Tstg
--55 to +150
°C
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: MCPH3
7019A-006
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
MCH3914-7-TL-H
MCH3914-8-TL-H
0.15
2.0
Packing Type : TL
Marking
3
R
A
J
N
K
0 to 0.02
TL
1
2
0.65
0.3
Electrical Connection
2
1 : Source
2 : Drain
3 : Gate
3
SANYO : MCPH3
1
http://www.sanyosemi.com/en/network/
80812 TKIM/72209AC TKIM TC-00002014
No. A1511-1/6
MCH3914
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--15
max
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--10 A, V =0V
DS
=--10V, V =0V
V
nA
V
μ
(BR)GDS
G
I
V
--1.0
GSS
(off)
GS
DS
=5V, I =10
V
V
A
--0.6
16.0*
14
--1.4
--3.0
μ
GS
DS
D
Zero-Gate Voltage Drain Current
I
V
=5V, V =0V
50.0*
mA
mS
mS
pF
pF
DSS
yfs 1
DS GS
V
=5V, I =10mA, f=1kHz
D
21
29
|
|
|
DS
Forward Transfer Admittance
yfs 2
V
=5V, V =0V, f=1kHz
GS
14
|
DS
Input Capacitance
Ciss
Crss
4.9
1.4
V
=5V, V =0V, f=1MHz
GS
DS
Reverse Transfer Capacitance
: The MCH3914 is classified by I
as follows : (unit : mA)
*
DSS
Rank
7
8
I
16.0 to 32.0
25.0 to 50.0
DSS
Ordering Information
Device
MCH3914-7-TL-H
MCH3914-8-TL-H
Package
MCPH3
MCPH3
Shipping
memo
3,000pcs./reel
3,000pcs./reel
Pb Free and Halogen Free
I
D
-- V
DS
I
-- V
D GS
24
20
16
60
V
=5V
DS
V
=0V
DS
50
40
30
20
10
12
8
4
0
--1.0V
0
0
4
8
12
16
20
--2.8
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
Drain-to-Source Voltage, V
DS
-- V ITR02811
Gate-to-Source Voltage, V
GS
-- V
IT14783
No. A1511-2/6
MCH3914
I
D
-- V
GS
| yfs | -- I
DSS
50
40
100
V
=5V
V
=5V
=25mA
DS
DS
f=1kHz
I
DSS
7
5
30
20
10
0
3
2
10
--2.0
--1.6
--1.2
--0.8
--0.4
0
2
7
3
5
7
5
7
0
10
100
IT14784
Drain Current, I
-- mA
DSS
Gate-to-Source Voltage, V
-- V
ITR02813
GS
V
GS
(off) -- I
DSS
Ciss -- V
DS
5
10
V
=5V
=10μA
V
=0V
DS
GS
f=1MHz
I
D
7
3
2
5
3
2
--1.0
7
5
1.0
5
7
2
3
5
7
2
3
5
7
2
ITR02816
10
100
1.0
10
Drain Current, I
DSS
-- mA
IT14785
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
Crss -- V
D
DS
350
300
250
200
150
100
5
V
=0V
When mounted on ceramic substrate
GS
(600mm2
×
0.8mm)
f=1MHz
3
2
1.0
7
5
50
0
7
2
3
5
7
2
20
40
60
80
100
120
140
160
1.0
10
Ambient Temperature, Ta -- °C
Drain-to-Source Voltage, V
-- V
IT14786
ITR02817
DS
No. A1511-3/6
MCH3914
Taping Specification
MCH3914-7-TL-H, MCH3914-8-TL-H
No. A1511-4/6
MCH3914
Outline Drawing
Land Pattern Example
MCH3914-7-TL-H, MCH3914-8-TL-H
Mass (g) Unit
Unit: mm
0.007
mm
* For reference
0.4
0.65 0.65
No. A1511-5/6
MCH3914
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1511-6/6
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