MCH5837 [SANYO]
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device; MOSFET ： N沟道MOSFET硅SBD ：肖特基二极管通用开关设备
| 型号： | MCH5837 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 文件： | 总6页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0781
SANYO Sem iconductors
DATA S HEET
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
MCH5837
General-Purpose Switching Device
Applications
Features
•
Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M)
contained in one package facilitating high-density mounting.
[MOSFET]
•
•
•
Low ON-resistance.
1.8V drive.
•
[SBD]
•
Short reverse recovery time.
•
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
V
V
20
±10
2
V
V
DSS
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Marking : YB
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
8
A
DP
P
0.8
150
W
°C
°C
D
Tch
Tstg
--55 to +125
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41807PE TI IM TC-00000616 No. A0781-1/6
MCH5837
Continued from preceding page.
Parameter
[SBD]
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
V
V
15
15
1
V
V
RRM
RSM
I
O
A
I
50Hz sine wave, 1 cycle
3
A
FSM
Tj
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
20
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=20V, V =0V
GS
1
DSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
GSS
V
(off)
GS
=10V, I =1mA
0.4
1.4
1.3
D
Forward Transfer Admittance
yfs
=10V, I =1A
2.4
110
150
210
115
35
S
D
R
(on)1
I
D
I
D
I
D
=1A, V =4V
GS
145
215
320
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=0.5A, V =2.5V
GS
=0.1A, V =1.8V
GS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
DS
=10V, f=1MHz
DS
=10V, f=1MHz
DS
Coss
Crss
25
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
7.5
27
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
20
t
30
f
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Qg
Qgs
Qgd
V
V
V
=10V, V =4V, I =2A
GS
1.8
0.35
0.5
0.86
DS
DS
DS
D
=10V, V =4V, I =2A
GS
D
=10V, V =4V, I =2A
GS
D
V
SD
I =2A, V =0V
S
1.2
GS
Reverse Voltage
V
I
=0.5mA
15
V
V
R
R
V 1
F
I =0.3A
F
0.3
0.33
0.36
90
Forward Voltage
V 2
F
I =0.5A
F
0.33
V
Reverse Current
I
R
V
V
=6V
R
R
µA
pF
ns
Interterminal Capacitance
Reverse Recovery Time
C
=10V, f=1MHz
20
t
rr
I =I =100mA, See specified Test Circuit.
F R
10
Package Dimensions
unit : mm (typ)
Electrical Connection
7021A-008
5
4
2.0
0.15
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
5
4
3
0 to 0.02
1
2
Top view
1
2
3
0.65
0.3
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
1
2
3
4
5
SANYO : MCPH5
No. A0781-2/6
MCH5837
Switching Time Test Circuit
t
Test Circuit
rr
[MOSFET]
[SBD]
V
=10V
DD
Duty≤10%
V
IN
4V
0V
I
=1A
D
V
IN
R =10Ω
50Ω
100Ω
10Ω
L
D
V
OUT
10µs
PW=10µs
D.C.≤1%
--5V
G
t
rr
MCH5837
P. G
50Ω
S
I
-- V
I -- V
D GS
D
DS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.5
1.0
V
DS
=10V
0.5
0
V
=1.0V
GS
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT10329
IT10328
DS
R
(on) -- V
R (on) -- Ta
DS
DS
GS
300
250
200
150
100
350
300
250
200
150
100
Ta=25°C
I =0.1A
D
0.5A
1.0A
50
0
50
0
0
2
4
6
8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT10330
Ambient Temperature, Ta -- °C
IT10340
GS
No. A0781-3/6
MCH5837
I
-- V
yfs -- I
D
S
SD
5
5
V =0V
GS
V =10V
DS
3
2
3
2
1.0
7
5
1.0
3
2
C
°
7
5
a=75
T
0.1
7
5
3
2
3
2
0.1
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
0
0.2
0.4
0.6
0.8
1.0
1.2
IT10333
0.1
1.0
Drain Current, I -- A
Diode Forward Voltage, V
-- V
SD
IT10332
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
3
2
V
V
=10V
=4V
f=1MHz
DD
GS
100
7
5
100
7
5
3
2
10
3
2
t (on)
d
7
5
t
r
3
2
0.01
10
2
3
5
7
2
3
5
7
1.0
2
3
5
0
2
4
6
8
10
12
14
16
18
20
0.1
Drain-to-Source Voltage, V
-- V
IT10334
IT10335
Drain Current, I -- A
DS
D
V
-- Qg
A S O
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2
V
I =2A
D
=10V
DS
I
=8A
PW≤10µs
10 DP
7
5
3
I =2A
D
2
1.0
7
5
3
2
Operation in this
area is limited by R (on).
0.1
7
5
DS
3
2
Ta=25°C
0.5
0
Single pulse
Mounted on a ceramic board (900mm2
✕0.8mm) 1unit
0.01
0.01
0
0.5
1.0
1.5
2.0
IT10336
2
3
5
7
2
3
5
7
2
3
5
2
3
5 7
0.1
1.0
10
-- V
Drain-to-Source Voltage, V
DS
IT12366
Total Gate Charge, Qg -- nC
P
-- Ta
D
1.0
0.8
0.6
0.4
0.2
0
160
IT12365
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
No. A0781-4/6
MCH5837
I
-- V
I
-- V
R R
F
F
100000
10
7
5
3
2
10000
1000
100
10
1.0
7
5
3
2
0.1
7
5
3
2
1.0
0.01
7
5
0.1
3
2
0.001
0.01
0
0.1
0.2
0.3
0.4
0.5
IT07150
0
5
10
15
IT07151
Forward Voltage, V -- V
F
Reverse Voltage, V -- V
R
P (AV) -- I
F
C -- V
O
R
0.7
0.6
0.5
0.4
0.3
0.2
2
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
f=1MHz
(4)(3)
(2)
(1)
100
7
5
Rectangular wave
3
2
θ
360°
Sine wave
0.1
0
180°
360°
10
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
2
3
5
7
2
3
5
7
2
1.0
10
Reverse Voltage, V -- V
Average Output Current, I -- A
IT07152
IT07153
R
O
I
-- t
FSM
12
10
Current waveform 50Hz sine wave
I
S
20ms
t
8
6
4
2
0
7
2
3
5
7
2
3
5
7
1.0
2
3
0.01
0.1
Time, t -- s
IT00626
No. A0781-5/6
MCH5837
Note on usage : Since the MCH5837 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0781-6/6
相关型号：
©2020 ICPDF网 联系我们和版权申明