SBE813 [SANYO]
Low IR Schottky Barrier Diode 30V, 3.0A Rectifier; 低IR肖特基势垒二极管的30V ， 3.0A整流器
| 型号： | SBE813 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Low IR Schottky Barrier Diode 30V, 3.0A Rectifier |
| 文件： | 总3页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8967
SANYO Sem iconductors
DATA S HEET
Low I Schottky Barrier Diode
R
SBE813
30V, 3.0A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
30
35
RRM
RSM
V
V
I
3.0
20
A
O
Surge Forward Current
I
50Hz sine wave, 1 cycle
A
FSM
Tj
Junction Temperature
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Reverse Voltage
Symbol
Conditions
Unit
min
max
V
I
=0.5mA
30
V
V
R
R
V 1
F
I =2.0A
F
0.435
0.47
0.485
0.52
42
Forward Voltage
V 2
F
I =3.0A
F
V
Reverse Current
I
V
=15V
µA
pF
R
R
R
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : SE
C
V
=10V, f=1MHz
90
50
t
I =I =100mA, See specified Test Circuit.
Mounted on a ceramic board (1200mm2✕0.8mm)
20
ns
rr
F R
Rth(j-a)
°C / W
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406SB MS IM TB-00002132 No.8967-1/3
SBE813
Package Dimensions
unit : mm
Electrical Connection
7012-001
8
7
6
5
1 : Anode1
2 : No Contact
3 : Anode2
0.3
0.15
8
7
6
5
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
1
2
3
4
1
2
3
4
Top view
0.65
2.9
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : VEC8
I
-- V
I
-- V
R
F
F
R
10
7
5
10000
1000
100
10
3
2
1.0
7
5
3
2
1.0
0.1
0.1
7
5
C
C
C
C
C
°
C
C
°
°
°
°
°
°
3
2
0
0.01
75
50
25
-25
-
100
a=125
T
0.001
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IT09868
0
5
10
15
20
25
30
35
IT09869
Forward Voltage, V -- V
Reverse Voltage, V -- V
R
F
P (AV) -- I
P (AV) -- V
F
O
R R
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
4.00E--04
3.50E--04
3.00E--04
2.50E--04
2.00E--04
1.50E--04
1.00E--04
Rectangular
wave
(1)
(2) (3)
(4)
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(1)
θ
360°
(2)
(3)
360°
θ
Sine wave
Rectangular
wave
V
R
180°
360°
360°
Sine wave
180°
V
R
(4)
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
5.00E--05
0.00E+00
0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT09870
0
5
10
15
20
25
30
35
IT10631
Average Output Current, I -- A
Peak Reverse Voltage, V -- V
R
O
No.8967-2/3
SBE813
Tc -- I
C -- V
R
O
7
5
140
120
100
80
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
3
2
*When mounted in reliability
operaion board, Rth(J-a)=50°C/W
60
Rectangular
wave
100
θ
40
360°
7
5
Sine
(1)
(2) (4) (3)
wave
20
0
180°
360°
3
0.1
2
3
5
7
2
3
5
7
10
2
3
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT10632
1.0
IT09871
Average Output Current, I -- A
Reverse Voltage, V -- V
R
O
I
-- t
FSM
24
20
16
12
8
Current waveform 50Hz sine wave
IS
20ms
t
4
0
7
2
3
5
7
2
3
5
7
1.0
2
3
0.01
0.1
Time, t -- s
ID00523
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
No.8967-3/3
PS
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