SCH1335 [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | SCH1335 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：382K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1939
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SCH1335
Features
•
1.8V drive
•
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--12
±10
--2.5
--10
0.8
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SCH6
7028-002
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 5,000 pcs./reel
1.6
0.2
0.2
Packing Type : TL
Marking
YL
6
5 4
3
2
1
TL
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
SANYO : SCH6
3
4
http://semicon.sanyo.com/en/network
No. A1939-1/4
33011PE TKIM TC-00002321
SCH1335
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--12
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--12V, V =0V
--10
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
=--6V, I =--1mA
--0.4
--1.3
V
GS
yfs
DS D
Forward Transfer Admittance
V
DS
=--6V, I =--1A
D
3.3
S
|
R
R
R
(on)1
(on)2
(on)3
I
=--1A, V =--4.5V
GS
86
125
185
270
90
112
175
285
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--0.5A, V =--2.5V
GS
m
m
I
D
=--0.2A, V =--1.8V
GS
Input Capacitance
Ciss
V
=--6V, f=1MHz
=--6V, f=1MHz
=--6V, f=1MHz
pF
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
pF
pF
ns
DS
V
72
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
6.5
21
d
r
ns
Turn-OFF Delay Time
Fall Time
(off)
33
ns
d
f
33
ns
Total Gate Charge
Qg
V
=--6V, V =--4.5V, I =--2.5A
GS
3.1
0.7
0.9
--0.84
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=--6V, V =--4.5V, I =--2.5A
GS
D
V
DS
=--6V, V =--4.5V, I =--2.5A
GS
D
V
SD
I =--2.5A, V =0V
S
--1.2
GS
Switching Time Test Circuit
V = --6V
DD
V
IN
0V
--4.5V
I
= --1A
D
V
IN
R =6Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
SCH1335
P. G
50Ω
S
I
D
-- V
DS
I
-- V
D GS
--2.5
--3.0
--2.5
--2.0
--1.5
--1.0
Ta=25°C
V
= --6V
DS
--2.0
--1.5
--1.0
--0.5
0
--0.5
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain-to-Source Voltage, V
DS
-- V
IT16351
Gate-to-Source Voltage, V
GS
-- V
IT16352
No. A1939-2/4
SCH1335
R
(on) -- V
GS
R
(on) -- Ta
DS
DS
400
350
300
250
200
150
100
250
200
150
100
Ta=25°C
I
= --0.2A
D
--0.5A
--1.0A
50
0
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--80 --60 --40 --20
0
20 40 60 80 100 120 140 160 180
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT16353
IT16354
| yfs | -- I
I
-- V
D
S SD
10
7
--10
7
5
V
= --6V
V
=0V
DS
GS
3
2
5
--1.0
3
2
7
5
3
2
1.0
7
--0.1
7
5
3
2
5
--0.01
3
2
7
5
3
2
0.1
--0.01
--0.001
2
3
5
7
2
3
5
7
2
3
5
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--0.1
--1.0
--10
Drain Current, I -- A
D
IT16355
Diode Forward Voltage, V -- V
SD
IT16356
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
100
1000
V
V
= --6V
f=1MHz
DD
= --4.5V
7
5
7
5
GS
3
2
3
2
t
f
10
100
7
t (on)
d
7
5
5
3
2
3
2
10
1.0
--0.1
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10
--12
IT16358
--1.0
--10
IT16357
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
D
DS
A S O
V
-- Qg
GS
--4.5
--100
V
= --6V
= --2.5A
7
5
DS
I
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
D
3
2
I
= --10A (PW≤10μs)
DP
--10
7
5
I
= --2.5A
D
3
2
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
--0.1
DS
7
5
Ta=25°C
Single pulse
3
2
--0.5
0
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT16359
2
3
5
7
2
3
5
7
2
3
5 7
--100
IT16360
--0.1
--1.0
--10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V -- V
DS
No. A1939-3/4
SCH1335
P
-- Ta
D
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16361
Note on usage : Since the SCH1335 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of March, 2011. Specifications and information herein are subject
to change without notice.
PS No. A1939-4/4
相关型号：
SCH1335-TL-H
P-Channel Power MOSFET, -12V, -2.5A, 112mΩ, Single SCH6, SOT-563 / SCH6, 5000-REEL
ONSEMI
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