TF222 [SANYO]
N-channel Junction FET; N沟道结型FET
| 型号： | TF222 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-channel Junction FET |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN7281A
N-channel Junction FET
TF222
Electret Condenser Microphone Applications
Preliminary
Features
Package Dimensions
• Especially suited for use in electret condenser
microphone.
unit : mm
2207A
• Ultrasmall package permitting TF222 applied
sets to be made small and slim.
• Excellent voltage characteristics.
• Excellent transient characteristics.
• Adoption of FBET process.
[TF222]
Top View
1.4
Side View
0.1
0.25
3
1
2
0.45
0.2
Bottom View
3
Side View
1 : Drain
2 : Source
3 : Gate
Specifications
2
1
SANYO : SSFP
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Symbol
Conditions
Ratings
Unit
V
GDO
--20
10
V
Gate Current
I
G
mA
mA
mW
°C
Drain Current
I
1
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
100
150
D
Tj
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--20
max
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
V
I
=--100µA
V
V
(BR)GDO
G
V
V
V
V
V
V
=2V, I =1µA
--0.1
140*
0.5
--1.0
GS(off)
DS
DS
DS
DS
DS
D
Drain Current
I
=2V, V =0
GS
350*
µA
mS
pF
pF
DSS
yfs
Forward Transfer Admittance
Input Capacitance
=2V, V =0, f=1kHz
GS
Ciss
Crss
=2V, V =0, f=1MHz
GS
5.0
1.1
Reverse Transfer Capacitance
=2V, V =0, f=1MHz
GS
Continued on next page.
* : The TF222 is classified by I
Rank
as follows : (unit : µA)
DSS
B4
B5
I
140 to 240
210 to 350
DSS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503 TS IM / O3002 TS IM TA-3621 No.7281-1/4
TF222
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[Ta=25˚C, V =2.0V, R =2.2kΩ, Cin=5pF, See specified Test Circuit.]
CC
L
Voltage Gain
G
f=1kHz, V =10mV
IN
--2.0
--0.6
dB
dB
dB
%
V
Reduced Voltage Characteristics
Frequency Characteristics
Total Harmonic Distortion
Output Noise Voltage
∆G
VV
f=1kHz, V =10mV, V =2→1.5V
--2.0
IN
CC
∆G
Vf
THD
f=1kHz to 110Hz
--1.0
f=1kHz, V =30mV
IN
0.7
V
V
=0, A curve
IN
--102
dB
NO
Test Circuit
Voltage gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
2.2kΩ
V
=2V
CC
CC
V
=1.5V
33µF
5pF
+
V
THD
VTVM
B
A
OSC
Output Impedance
I
-- V
I
-- V
D DS
D
DS
400
400
300
200
300
200
100
0
100
0
--0.2V
--0.3V
--0.2V
--0.3V
--0.4V
--0.4V
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
IT04744
Drain-to-Source Voltage, V
DS
-- V
IT04743
Drain-to-Source Voltage, V -- V
DS
I
-- V
I
-- V
D GS
D
GS
500
400
300
200
500
400
300
200
V
=2V
V
=2V
DS
DS
100
0
100
0
--1.0
--0.8
--0.6
--0.4
--0.2
0
--1.0
--0.8
--0.6
--0.4
--0.2
0
IT04745
IT04746
Gate-to-Source Voltage, V
GS
-- V
Gate-to-Source Voltage, V -- V
GS
No.7281-2/4
TF222
V
(off) -- I
DSS
yfs -- I
GS
D
0.7
0.6
0.5
0.4
0.3
2.0
1.8
1.6
1.4
1.2
1.0
V
=2V
V
V
=2V
=0
DS
DS
GS
I =1µA
D
f=1kHz
0.2
0.1
0.8
0.6
0
100
200
300
400
500
IT04747
0
100
200
300
400
500
IT04748
Drain Current, I
-- µA
Drain Current, I
DSS
-- µA
DSS
Ciss -- V
Crss -- V
DS
DS
2
5
3
2
10
7
5
1.0
3
2
7
5
1.0
3
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
IT04749
1.0
10
IT04750
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V -- V
DS
DS
G
-- I
∆G
-- I
VV DSS
V
DSS
--0.5
0
∆G
: V =2V→1.5V
G
:
V
=2V
VV CC
V
CC
=10mV
V
=10mV
V
IN
--1.0
--1.5
IN
--0.2
--0.4
--0.6
--0.8
--1.0
f=1kHz
f=1kHz
I
:
V =2V
DS
R =2.2kΩ
DSS
L
Cin=5pF
I
: V =2V
--2.0 DSS DS
--2.5
--3.0
--3.5
--1.2
--1.4
--4.0
--4.5
0
100
200
300
400
500
IT04751
0
100
200
300
400
500
IT04752
Drain Current, I
DSS
-- µA
Drain Current, I -- µA
DSS
THD -- I
P
-- Ta
DSS
D
1.2
1.0
0.8
0.6
0.4
120
100
80
60
40
20
0
0.2
0
0
100
200
300
400
500
IT04753
0
20
40
60
80
100
120
140
160
Drain Current, I
-- µA
Ambient Temperature, Ta -- °C
ITR02650
DSS
No.7281-3/4
TF222
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are subject
to change without notice.
PS No.7281-4/4
相关型号：
TF222B-B4
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TSSFP, 3 PIN
ONSEMI
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