2SC3626 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3626 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3626
DESCRIPTION
·
·With TO-220Fa package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
V
Collector-base voltage
500
400
7
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
Open collector
V
8
A
ICM
Collector current-peak
Base current
10
A
IB
4
A
Ta=25ꢀ
TC=25ꢀ
2.0
40
PC
Collector power dissipation
W
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3626
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
400
500
TYP.
MAX
UNIT
V
IC=10mA; IB=0
IC=1mA; IE=0
V
IC=4 A;IB=0.8 A
IC=4 A;IB=0.8 A
VCB=400V ;IE=0
VEB=7V ;IC=0
1.0
1.5
100
1
V
V
µA
mA
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=4A ; VCE=5V
15
10
hFE-2
DC current gain
Switching times
tr
ts
tf
Rise time
1.0
2.5
1.0
µs
µs
µs
V
CC≈200V,RL=50Ω
Storage time
Fall time
IC=4A ;IB1=-IB2=0.4 A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3626
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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