2SD1426 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1426 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1426
DESCRIPTION
·With TO-3PH package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV deflection
circuits
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PH) and symbol
3
Emitter
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1500
600
UNIT
V
Open base
V
Open collector
5
V
3.5
A
IB
Base current
1.0
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
80
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction case
1.56
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1426
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=200mA; IC=0
5
Collector-emitter saturation voltage IC=3A; IB=0.8A
8.0
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
DC current gain
IC=3A; IB=0.8A
V
VCB=500V; IE=0
µA
hFE
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V;f=1MHz
IE=0 ; VCB=10V;f=1.0MHz
IF=3.5A
8
fT
Transition freuqency
Output capacitance
Diode forward voltage
Fall time
3
MHz
pF
V
COB
95
VF
2.0
1.0
tf
IC=3A;IB1=0.8A
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1426
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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