2SD820 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD820
型号: 2SD820
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 放大器 局域网
文件: 总3页 (文件大小:109K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD820  
DESCRIPTION  
·With TO-3 package  
·High voltage ,high speed  
·Low collector saturation voltage  
APPLICATIONS  
·For color TV horizontal output applications  
PINNING(see fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
1500  
600  
5
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
5
A
IE  
Emitter current  
-5  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
50  
W
Tj  
150  
-65~150  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD820  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCEsat  
VBEsat  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
Collector-emitter sustaining voltage IC=0.1A; IB=0  
Collector-emitter saturation voltage IC=4 A;IB=0.8 A  
600  
V
V
3.0  
5.0  
1.5  
10  
1
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=4 A;IB=0.8 A  
VCB=500V;IE=0  
V
µA  
mA  
IEBO  
VEB=5V; IC=0  
hFE  
IC=1A ; VCE=5V  
IE=0; VCB=10V;f=1MHz  
IC=0.1A ; VCE=10V  
ICP=4A ;IB1=0.8A  
8
20  
165  
3
COB  
Output capacitance  
Transition frequency  
Fall time  
pF  
MHz  
µs  
fT  
tf  
0.5  
1.0  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD820  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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