2SD821 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD821 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD821
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
600
5
UNIT
V
Open emitter
Open base
V
Open collector
V
6
A
IE
Emitter current
-6
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
W
ꢀ
Tj
150
-65~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD821
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A; IB=0
Collector-emitter saturation voltage IC=5 A;IB=1 A
600
3.0
5.0
1.5
10
1
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5 A;IB=1 A
V
VCB=500V;IE=0
VEB=5V; IC=0
µA
mA
IEBO
hFE
IC=1A ; VCE=5V
IE=0; VCB=10V;f=1MHz
IC=0.1A ; VCE=10V
ICP=5A ;IB1=1A
8
20
165
3
COB
Output capacitance
Transition frequency
Fall time
pF
MHz
µs
fT
tf
0.5
1.0
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD821
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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