BU205 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU205 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU205
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For use in horizontal deflection output
stages for color TV receives.
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Collector current
CONDITIONS
VALUE
1500
700
UNIT
V
Open emitter
Open base
V
2.5
A
ICM
Collector current-peak
Base current
3
A
IB
0.1
A
IBM
Base current-peak
1.5
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
10
W
ꢀ
Tj
115
Tstg
-65~115
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
2.5
K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU205
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
700
5
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH
V
V
Emitter-base breakdown votage
IE=10mA; IC=0
Collector-emitter saturation voltage IC=2 A;IB=1A
5.0
1.5
1.0
V
Base-emitter saturation voltage
Collector cut-off current
DC current gain
IC=2 A;IB=1A
V
VCE=1500V;VBE=0
IC=2A ; VCE=5V
mA
hFE
2
COB
Output capacitance
Transition frequency
Fall time
IE=0; VCB=10V;f=1MHz
IC=0.1A ; VCE=15V
65
7.5
pF
MHz
µs
fT
IC=2A ;IB=1A
LB=10µH
tf
0.75
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU205
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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