BU2525DX [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU2525DX |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2525DX
DESCRIPTION
·With TO-3PML package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of large screen color TV receivers
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current (DC)
CONDITIONS
VALUE
1500
800
7.5
UNIT
V
Open emitter
Open base
V
Open collector
V
12
A
ICM
30
A
IB
8
A
IBM
Base current -peak
12
A
Ptot
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
45
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2525DX
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
800
7.5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
Emitter-base breakdown voltage
IE=600mA ;IC=0
13.5
V
Collector-emitter saturation voltage IC=8A ;IB=1.6 A
5.0
1.1
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=8A ;IB=1.6 A
V
VCE=BVCES; VBE=0
TC=125ꢀ
1.0
2.0
mA
mA
IEBO
VEB=6V; IC=0
72
110
11
218
hFE-1
IC=1A ; VCE=5V
IC=8A ; VCE=5V
IF=8A
hFE-2
DC current gain
5
7
9.5
2.0
VF
Diode forward voltage
Collector capacitance
1.6
145
V
CC
IE=0 ; VCB=10V;f=1MHz
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2525DX
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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