BU921 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU921 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU921
DESCRIPTION
·With TO-3 package
·High current;high voltage
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition applications
and inverter circuits for motor control.
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings (Tc=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
450
400
5
UNIT
V
Open emitter
Open base
V
Open collector
V
10
A
ICM
Collector current-peak
Base current
15
A
IB
5
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
120
175
-65~175
W
ꢀ
Tj
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
1.25
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU921
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICES
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A; IB=0
Collector-emitter saturation voltage IC=5A;IB=50mA
Collector-emitter saturation voltage IC=7 A;IB=140mA
400
V
V
1.8
1.8
2.2
2.5
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=5A;IB=50mA
V
IC=7 A;IB=140mA
V
VCE=450V;VBE=0
TC=150ꢀ
0.25
0.50
mA
mA
mA
ICEO
VCE=400V;IB=0
VEB=5V; IC=0
IC=2A; VEB=2V
IF=7A
0.25
50
IEBO
hFE
DC current gain
500
VF
Diode forward voltage
2.5
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU921
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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