KSC2334 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | KSC2334 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC2334
DESCRIPTION
·With TO-220 package
·Complement to type KSA1010
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC/DC converters
·High frequency power amplifiers
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
150
100
7
UNIT
V
Open emitter
Open base
V
Open collector
V
7
A
ICM
Collector current-peak
Base current
15
A
IB
3.5
A
Ta=25ꢀ
TC=25ꢀ
1.5
PT
Total power dissipation
W
40
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC2334
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Base-emitter sustaining voltage
IC=5.0A ,IB=0.5A,L=1mH
100
Collector-emitter saturation voltage IC=5A; IB=0.5A
0.6
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A; IB=0.5A
VCB=100V; IE=0
VEB=5V; IC=0
V
µA
µA
IEBO
10
hFE-1
IC=0.5A ; VCE=5V
IC=3A ; VCE=5V
IC=5A ; VCE=5V
40
40
20
hFE-2
DC current gain
240
hFE-3
DC current gain
Switching times resistive load
ton
ts
Turn-on time
Storage time
Fall time
0.5
1.5
0.5
µs
µs
µs
IC=5A IB1=- IB2=0.5A
RL=10Ω;VCC≈50V
tf
ꢀ hFE-2 Classifications
R
O
Y
40-80
70-140
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC2334
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC2334
4
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