MJE3055T [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
MJE3055T
型号: MJE3055T
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件: 总4页 (文件大小:121K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE3055T  
DESCRIPTION  
·With TO-220 package  
·Complement to type MJE2955T  
·DC current gain -hFE = 20–70 @ IC = 4 Adc  
·Collector–emitter saturation voltage -  
V
CE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc  
APPLICATIONS  
·Designed for general–purpose  
switching and amplifier applications.  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
Collector  
Emitter  
3
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
70  
Open base  
60  
V
Open collector  
5
10  
V
A
IB  
Base current  
6
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
75  
W
150  
-55~150  
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.67  
/W  
Rth j-c  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE3055T  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE  
PARAMETER  
Collector-emitter sustaining voltage  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
Collector cut-off current  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
CONDITIONS  
IC=0.2A ;IB=0  
MIN  
TYP.  
MAX  
UNIT  
V
60  
IC=4A ;IB=0.4A  
IC=10A ;IB=3.3A  
IC=4A ; VCE=4V  
VCE=30V; IB=0  
1.1  
8.0  
1.8  
0.7  
V
-1  
(sat)  
V
VCE  
-2  
(sat)  
VBE  
V
ICEO  
ICEX  
ICBO  
IEBO  
hFE-1  
hFE-2  
fT  
mA  
mA  
mA  
mA  
VCE=70V; VBE(off)=1.5V  
TC=150ꢀ  
1.0  
5.0  
VCB=70V; IE=0  
TC=150ꢀ  
1.0  
10  
VEB=5V; IC=0  
5.0  
DC current gain  
IC=4A ; VCE=4V  
IC=10A ; VCE=4V  
IC=0.5A ; VCE=10V  
20  
5.0  
2.0  
100  
DC current gain  
Transition frequency  
MHz  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE3055T  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE3055T  
4

相关型号:

MJE3055T-TA3-T

HIGH VOLTAGE TRANSISTOR
UTC

MJE3055T-TM3-T

HIGH VOLTAGE TRANSISTOR
UTC

MJE3055T-TN3-R

HIGH VOLTAGE TRANSISTOR
UTC

MJE3055T-TN3-T

HIGH VOLTAGE TRANSISTOR
UTC

MJE3055T16

10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MOTOROLA

MJE3055T16A

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA

MJE3055TAF

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA

MJE3055TAJ

TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI

MJE3055TAN

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
ONSEMI

MJE3055TAS

TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI

MJE3055TBA

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
ONSEMI

MJE3055TBD

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
ONSEMI