MJE340 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | MJE340 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE340
DESCRIPTION
·With TO-126 package
·High power dissipation
APPLICATIONS
·Useful for high-voltage general purpose
applications
·Suitable for transformerless ,line-operated
equipment
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
Collector;connected to
mounting base
2
3
Base
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
300
UNIT
Open emitter
Open base
V
V
V
A
W
ꢀ
300
Open collector
3
0.5
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
20
150
Tj
-65~150
ꢀ
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Thermal resistance junction to case
6.25
ꢀ/W
Rth j-C
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE340
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
300
300
3
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=1.0mA;IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
IC=100µA;IE=0
IE=100µA;IC=0
V
V
Collector-emitter saturation voltage IC=100mA ;IB=10mA
1.0
1.5
V
VCE
VBE
(sat)
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=100mA ;IB=10mA
VCB=300V; IE=0
VEB=3V; IC=0
V
(sat)
ICBO
100
100
240
µA
µA
IEBO
hFE
IC=50mA ; VCE=10V
30
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE340
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
MJE340STU
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
MJE341LEADFREE
Power Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CENTRAL
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