2N5832 [SECOS]
NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2N5832 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor |
| 文件： | 总1页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5832
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching Transistor
TO-92
G
H
J
Millimeter
REF.
A
D
Min.
Max.
4.70
4.70
-
A
B
C
D
E
F
4.40
4.30
12.70
3.30
0.36
0.36
B
Collector
3.81
0.56
0.51
K
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
Base
E
C
F
2.66
0.76
K
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
160
V
Collector to Emitter Voltage
Emitter to Base Voltage
140
V
5
0.6
V
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
A
PC
625
mW
°C / W
°C
RθJA
TJ, TSTG
200
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
160
-
-
-
-
-
-
-
-
-
-
-
-
V
IC= 0.1mA, IE = 0A
140
-
V
IC= 1mA, IB = 0A
5
-
V
IE= 0.01mA, IC = 0A
VCB= 120V, IE = 0 A
VEB= 4V, IC =0 mA
VCE= 5V, IC= 10mA
IC= 50mA, IB= 5mA
IC= 50mA, IB= 5mA
VCE= 5V, IC= 1mA
-
0.05
0.05
500
0.25
1
μA
μA
Emitter Cut-Off Current
IEBO
-
DC Current Gain
hFE
175
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
VCE(sat)
VBE(sat)
VBE
-
V
V
-
-
-
0.8
4
V
Collector output capacitance
Transition frequency
Cob
pF
VCB= 10V, IE= 0 mA, f=1MHz
fT
100
-
MHz VCE= 10V, IC= 1mA , f=100MHz
.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
Page 1 of 1
相关型号：
©2020 ICPDF网 联系我们和版权申明