2SC2873 [SECOS]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | 2SC2873 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总3页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2873
NPN Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
FEATURES
z
z
z
Low saturation voltage
High speed switching time
Complementary to 2SA1213
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Millimeter
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
50
V
REF.
REF.
Min.
4.4
Max.
4.6
5
V
A
B
C
D
E
F
G
H
I
J
K
L
M
4.05
1.50
1.30
2.40
0.89
4.25
1.70
1.50
2.60
1.20
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
2
A
0.40
1.40
0.35
0.52
1.60
0.41
PC
500
150
-55-150
mW
TJ
℃
5q TYP.
0.70 REF.
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100μA, IE=0
50
50
5
V(BR)CEO IC=10mA, IB=0
V
V(BR)EBO IE=100μA , IC=0
V
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
VCB=50V, IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=5V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=2A
70
40
240
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
0.5
1.2
V
V
120
30
MHz
pF
Collector output capacitance
Turn on Time
Cob
ton
0.1
1.0
0.1
Switching Time
tstg
VCC=30V, IC=1A, IB1=-IB2=0.05A
μs
Storage Time
Fall Time
tf
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
70-140
MO
120-240
MY
Marking
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
08-May-2007 Rev. A
Page 1 of 3
2SC2873
NPN Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
Typical Characteristics
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
08-May-2007 Rev. A
Page 2 of 3
2SC2873
NPN Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
08-May-2007 Rev. A
Page 3 of 3
相关型号：
2SC2873-Y(TE12L,ZC
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA
©2020 ICPDF网 联系我们和版权申明