3DD13001 [SECOS]
0.2A , 600V NPN Plastic-Encapsulated Transistor; 0.2A ， 600V NPN塑料封装晶体管
| 型号： | 3DD13001 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 0.2A , 600V NPN Plastic-Encapsulated Transistor |
| 文件： | 总2页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3DD13001
0.2A , 600V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
ꢀ
Power switching applications
A
D
B
CLASSIFICATION OF hFE(1)
Product-Rank
3DD13001-A
3DD13001-B
20~26
E
C
F
Range
17~23
G
H
1Base
2Collector
3Emitter
3
Emitter
J
1
Base
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.70
4.70
-
Min.
Max.
A
B
C
D
E
4.40
4.30
12.70
3.30
0.36
F
G
H
J
0.30
0.51
1.27 TYP.
1.10
2.42
0.36
1.40
2.66
0.76
Collector
3.81
0.56
2
K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
600
V
V
400
7
0.2
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
A
PC
750
mW
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ. Max.
Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
600
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
IC=0.1mA, IE=0
IC=1mA, IB=0
400
7
-
-
IE=0.1mA, IC=0
VCB=600V, IE=0
VCE=400V, IB=0
VEB=7V, IC=0
100
200
100
26
-
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
µA
µA
ICEO
-
IEBO
-
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
17
5
-
VCE=20V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
0.5
1.2
-
V
V
-
8
-
MHz VCE=20V, IC=20mA, f =1MHz
tF
0.3
1.5
µs
µs
I
B1= -IB2=5mA
VCC=45V, IC=50mA
Storage time
tS
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Aug-2011 Rev. A
Page 1 of 2
3DD13001
0.2A , 600V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Aug-2011 Rev. A
Page 2 of 2
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