BAS70-06 [SECOS]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
| 型号： | BAS70-06 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Surface Mount Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS70/-04/-05/-06
Surface Mount Schottky Barrier Diodes
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
Min
FEATURES
Dim
A
B
C
D
G
H
J
Max
A
L
·
·
·
Low Turn-on Voltage
Low Forward Voltage - 0.75V(Max) @ I
2.800 3.040
1.200 1.400
0.890 1.110
0.370 0.500
1.780 2.040
0.013 0.100
0.085 0.177
0.450 0.600
0.890 1.020
2.100 2.500
0.450 0.600
F = 10 mA
Very Low Capacitance - Less Than 2.0pF @ 0V
For high speed switching application, circuit protection
S
C
Top View
B
G
MECHANICAL DATA
V
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
K
L
H
J
D
K
·
·
·
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
S
V
3
All Dimension in mm
1
2
3
3
3
3
1
2
2
2
2
1
1
1
BAS70-06 Marking: K76, 76
BAS70-05 Marking: K75, 75
BAS70 Marking: K73, BE, 73
BAS70-04 Marking: K74, 74
MAXIMUM RATINGS (T = 150OC unless otherwise noted)
J
Rating
Reverse Voltage
Symbol
Value
Unit
V
R
70
Volts
Forward Power Dissipation
P
F
@ T = 25°C
225
1.8
mW
A
O
Derate above 25°C
°
mW/5C
O
Operating Junction and Storage Temperature Range
Forward Continuous Current
T
T
±55 to +150
°
5C
J, stg
I
70
mA
mA
FM
Single Forward Current
t v 10 m
IFSM
100
ELECTRICALCHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
70
Max
—
Unit
Reverse Breakdown Voltage (I = 10 µA)
V
Volts
pF
R
(BR)R
Total Capacitance (V = 0 V, f = 1.0 MHz)
C
—
2.0
R
T
Reverse Leakage (V = 50 V)
(V = 70 V)
R
I
R
—
—
0.1
10
µAdc
R
Forward Voltage (I = 1.0 mAdc)
V
F
V
F
V
F
—
—
—
410
750
1.0
mVdc
mVdc
Vdc
F
Forward Voltage (I = 10 mAdc)
F
Forward Voltage (I = 15 mAdc)
F
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
Page 1 of 2
BAS70/-04/-05/-06
Surface Mount Schottky Barrier Diodes
Elektronische Bauelemente
100
10
100
T
= 150°C
A
10
125°C
1.0
85°C
0.1
1.0
0.1
150°C
125°C
0.01
–40°C
85
°
C
25°C
25°
C
–55
°
C
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10
20
30
40
50
60
70
V
, Reverse Voltage (V)
R
V , Forward Voltage (V)
F
Figure 1. Typical Forward Voltage
Figure 2. Reverse Current versus Reverse
Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5.0
10
15
20
25
30
35
40
45
50
V
, Reverse Voltage (V)
R
Figure 3. Typical Capacitance
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
Page 2 of 2
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