BC557 [SECOS]

Elektronische Bauelemente; 公司Bauelemente


型号：	BC557
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	Elektronische Bauelemente 公司Bauelemente 晶体晶体管开关 PC
文件：	总3页 (文件大小：308K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC556, B, C

BC557, A, B, C

BC558, A, B, C

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

PNP Transistor

FEATURES

Power dissipation

P_CM:

Collector current

I_CM:

0.625

- 0.1

-80

W (Tamb=25℃)

Collector-base voltage

V_CBO

BC556

BC557

BC558

-50

-30

2 3

Operating and storage junction temperature range

1. COLLECTOR

2. BASE

T_J, T_stg: -55℃ to +150℃

EMITTER

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

BC556

BC557

BC558

BC556

BC557

BC558

-80

-50

-30

-65

-45

-30

V_CBO

Ic= -100µA , I_E=0

V_CEO= -2mA, I_B=0

Emitter-base breakdown voltage

Collector cut-off current

V_EBO

I_E= -100µA, I_C=0

V_CB= -70V, I_E=0

-6

BC556

BC557

BC558

BC556

BC557

BC558

BC556

BC557

BC558

-0.1

I_CBO

_CB= -45 V, I_E=0

_CB= -25V, I_E=0

V_CE= -60 V, I_B=0

µA

Collector cut-off current

I_CEO

_CE= -40 V, I_B=0

_CE= -25 V, I_B=0

-0.1

µA

Emitter cut-off current

DC current gain

I_EBO

V_EB= -5V, I_C=0

BC556

BC557

BC558

120

180

420

500

800

220

460

800

h_FE(1)

V_CE=-5V, I_C= -2mA

BC557A/558A

BC556B/BC557B/BC558B

BC556C/BC557C/BC558C

Collector-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I _C=-100 mA, I_B= -5mA

I _C= -100 mA, I_B=-5mA

-0.3

-1

Base-emitter saturation voltage

Transition frequency

V_CE= -5V, I_C= -10mA

150

MHz

f _T

f = 100MHz

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

BC556, B, C

BC557, A, B, C

BC558, A, B, C

Elektronische Bauelemente

Typical Characteristics

1000

100

-50

V_CE= -5V

-45

I_B= -400µA

I_B= -350µA

-40

I_B= -300µA

I_B= -250µA

-35

-30

-25

-20

-15

-10

-5

I_B= -200µA

I_B= -150µA

I_B= -100µA

I_B= -50µA

-0.1

-0

-1

-10

-100

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

I_C[mA], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. DC current Gain

-10

-100

V_CE= -5V

I_C= -10 I_B

V_BE(sat)

-1

-10

-0.1

-1

V_CE(sat)

-0.01

-0.1

-1

-10

-100

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

I_C[mA], COLLECTOR CURRENT

V_BE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

1000

V_CE= -5V

f=1MHz

I_E= 0

100

-1

-10

-100

-1

-10

V_CB[V], COLLECTOR-BASE VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance

Figure 6. Current Gain Bandwidth Product

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 2 of 3

BC556, B, C

BC557, A, B, C

BC558, A, B, C

Elektronische Bauelemente

TO-92 PACKAGE OUTLINE DIMENSIONS

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

Min

Max

3.300

1.100

0.380

0.360

4.400

3.430

4.300

3.700

1.400

0.550

0.510

4.700

0.130

0.043

0.015

0.014

0.173

0.135

0.169

0.146

0.055

0.022

0.020

0.185

4.700

0.185

1.270TYP

0.050TYP

2.440

2.640

14.500

1.600

0.380

0.096

0.555

0.104

0.571

0.063

0.015

14.100

0.000

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 3 of 3

相关型号：