BC847BT [SECOS]
NPN Plastic Encapsulate Transistor; NPN塑料封装晶体管
| 型号： | BC847BT |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulate Transistor |
| 文件： | 总3页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847AT /BC847BT /BC847CT
NPN Plastic Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
SOT-523
Base
Emitter
Collector
A
M
3
MARKING
3
Product
Marking Code
Top View
C B
1
1
2
BC847AT
BC847BT
BC847CT
1E
1F
1G
L
2
K
F
E
D
H
G
J
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
1.5
1.45
0.75
0.7
0.9
0.15
1.7
G
H
J
K
L
-
0.1
PACKAGE INFORMATION
1.75
0.85
0.9
1.1
0.25
0.55 REF.
0.1
0.2
-
Package
MPQ
LeaderSize
0.5 TYP.
0.25 0.325
M
SOT-523
3K
7’ inch
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted )
Parameter
Symbol
VCBO
Ratings
Unit
V
Collector to Base Voltage
50
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
45
V
VEBO
6
0.1
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
IC
A
PC
150
mW
℃
TJ, TSTG
150, -55 ~ 150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 1 of 3
BC847AT /BC847BT /BC847CT
NPN Plastic Encapsulate Transistor
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified )
Min. Typ. Max. Unit
Test Conditions
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Symbol
VCBO
50
45
-
-
-
-
V
V
IC = 10 μA, IE = 0
VCEO
IC = 10 mA, IB = 0
Emitter to Base Breakdown Voltage
Collector Cutoff Current
VEBO
ICBO
6
-
-
V
IE = 1 μA, IC = 0
-
-
15
nA
VCB = 30 V
-
-
-
0.25
0.6
-
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
VCE(sat)
VBE(sat)
VBE(on)
V
V
-
0.7
0.9
660
-
-
-
-
580
-
700
770
220
450
800
VCE = 5 V, IC = 2 mA
mV
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 2 mA
BC847AT
BC847BT
BC847CT
110
200
420
-
DC Current Gain
hFE
-
-
V
CE = 5 V, IC = 10 mA
Transition Frequency
Collector Output Capacitance
Noise Figure
fT
100
-
-
MHz
pF
f = 100MHz
COb
NF
-
-
-
-
-
-
4.5
10
4
VCB = 10 V, f=1MHz
BC847BT
BC847CT
V
CE= 5V, BW= 200HZ,
dB
f= 1KHz, RS= 2 kΩ
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 2 of 3
BC847AT /BC847BT /BC847CT
NPN Plastic Encapsulate Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 3 of 3
相关型号：
BC847BT-13
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
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