BCP3669-C [SECOS]

NPN Plastic-Encapsulate Transistor;


型号：	BCP3669-C
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	NPN Plastic-Encapsulate Transistor
文件：	总2页 (文件大小：222K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BCP3669

2A, 80V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-89

ꢀ

Small Flat Package

Large Current Capacity

High DC Current Gain

APPLICATION

ꢀ

LF Amplifiers, Various Drivers, Muting Circuit

MARKING

3669

ꢁꢁꢁꢁ

Date Code

Millimeter

REF.

Min.

Max.

4.60

4.25

1.60

2.60

Min.

Max.

PACKAGE INFORMATION

4.40

3.94

1.40

2.25

0.40

0.58

1.50 TYP

3.00 TYP

Package

MPQ

Leader Size

0.32

0.52

0.44

SOT-89

7 inch

1.55 TYP.

0.35

0.89

1.20

Collector

ORDER INFORMATION

Part Number

Type

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

BCP3669

Base

BCP3669-C

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Total Power Dissipation

Junction, Storage Temperature

P_D

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ.

Max.

Unit

Test conditions

I_C=100µA, I_E=0

I_C=100µA, I_B=0

I_E=100µA, I_C=0

V_CB=80V, I_E=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

µA

Emitter Cut-off Current

I_EBO

V_BE=5V, I_C=0

Collector-Emitter Saturation Voltage ¹

Base-Emitter Saturation Voltage ¹

V_CE(sat)

V_BE(sat)

0.5

I_C=1A, I_B=50mA

1.2

180

240

V_CE=2V, I_C=500mA

V_CE=2V, I_C=1.5A

V_CE=2V, I_C=500mA

V_CB=10V, f=1MHz

DC Current Gain ¹

h_FE

Transition Frequency

Collector Output Capacitance

Turn on

f_T

C_ob

T_ON

T_STG

T_f

100

0.2

MHz

_CC=30V, R_L=30Ω, I_C=1A

Storage Time

µS

I_B1= -I_B1=50mA

Duty Cycle≦1%

Fall Time

Note:

0.2

1. Pulse Test: Pulse Width≦380µs, Duty Cycle≦2%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

08-Dec-2017 Rev. B

Page 1 of 2

BCP3669

2A, 80V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

08-Dec-2017 Rev. B

Page 2 of 2

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