BCV27 [SECOS]
NPN Darlington Plastic Encapsulated Transistor; NPN达林顿塑料封装晶体管
| 型号： | BCV27 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Darlington Plastic Encapsulated Transistor |
| 文件： | 总3页 (文件大小：459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCV27
40 V, 500mA
NPN Darlington Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
L
ꢀ
For general AF application high collector current
3
3
Top View
E
C B
ꢀ
High current gain
1
1
2
2
K
D
Collector
3
H
J
F
G
Millimeter
Min. Max.
Millimeter
REF.
REF.
1
Min.
-
0.40
0.08
Max.
0.18
0.60
0.20
A
B
C
D
E
F
2.70
2.10
1.20
0.89
1.78
0.30
3.04
2.80
1.60
1.40
2.04
0.50
G
H
J
K
L
Base
2
0.6 REF.
0.85
1.15
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
SYMBOL
VCBO
VCEO
VEBO
RATING
UNIT
V
40
Collector to Emitter Voltage
Emitter to Base Voltage
30
10
V
V
Collector Current - Continuous
Collector Current - Peak
IC
500
mA
mA
mW
°C/W
°C
ICM
800
Collector Power Dissipation
Thermal Resistance, Junction to Ambient Air
Junction, Storage Temperature
PC
350
RθJA
357
TJ, TSTG
150, -65~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL MIN
TYP
-
MAX UNIT
TEST CONDITION
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
40
-
V
IC=100µA, IE = 0A
IC=10mA, IB = 0A
IE=10µA, IC = 0A
30
-
-
V
10
-
-
V
-
-
0.1
µA
µA
VCB=30 V, IE = 0 A
VEB=4 V, IC = 0 A
VCE=1V, IC=100µA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
IC=100mA, IB=0.1mA
IC=100mA, IB=0.1mA
Emitter Cut-Off Current
IEBO
-
-
0.1
hFE1
hFE2
hFE3
hFE4
*
*
*
*
4000
-
-
-
10000
-
DC Current Gain
20000
-
-
-
4000
-
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
*
*
-
-
-
-
-
1
1.5
-
V
V
-
170
3.5
MHz VCE = 5V, IC =50mA, f=100MHz
pF VCB = 10V, f=1MHz
Collector Output Capacitance
Cob
-
*Pulse test: Pulse width ≦300µS; Ducy Cycle ≦2.0%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jan-2010 Rev. A
Page 1 of 3
BCV27
40 V, 500mA
NPN Darlington Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jan-2010 Rev. A
Page 2 of 3
BCV27
40 V, 500mA
NPN Darlington Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jan-2010 Rev. A
Page 3 of 3
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