EMG11 [SECOS]
Dual N-Ch Digital Transistors; 双N通道数字晶体管
| 型号： | EMG11 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Dual N-Ch Digital Transistors |
| 文件： | 总1页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMG11
Dual N-Ch Digital Transistors (Built-in Resistors)
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-553
Two DTC123JCA chips in a package
A
EQUIVALENT CIRCUIT
B
J
F
D
G
H
E
C
Millimeter
Millimeter
REF.
REF.
Min.
Max.
1.70
1.70
0.60
1.30
Min.
Max.
0.16
0.55
0.27
0.30
A
B
C
D
1.50
1.50
F
G
H
J
0.09
0.45
0.17
0.10
0.525
1.10
E
-
0.05
MARKING：G11
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Unit
Supply voltage
VCC
VIN
50
-5 ~ 12
100
V
V
Input voltage
Output current
IO
mA
mW
℃
Power dissipation
Junction & Storage temperature
PD
150
TJ, TSTG
150, -55 ~ 150
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Min.
Typ.
Max.
Parameter
Symbol
VI(ON)
VI(OFF)
VO(ON)
II
Unit
Test Conditions
VCC= 0.3V, IO= 5mA
VCC= 5V, IO= 100A
IO=5mA, II=0.25mA
VI= 5V
Input turn-on voltage
1.1
-
-
V
Input cut-off voltage
Output voltage
-
-
-
0.5
0.3
3.6
0.5
-
-
V
Input cut-off current
Output cut-off current
DC current gain
-
-
-
mA
A
IO(OFF)
GI
-
VCC= 50V, VI= 0
80
-
-
VO= 5V, IO= 10mA
Input resistance
R1
2.2
-
-
K
Resistance ratio
R2 / R1
17
26
V
CE= 10V, Ic= 5mA,
Transition frequency
fT
-
250
-
MHz
f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Jun-2010 Rev. A
Page 1 of 1
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