ESD05 [SECOS]

120W Transient Voltage Suppressors Diode; 120W瞬态电压抑制器二极管
ESD05
型号: ESD05
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

120W Transient Voltage Suppressors Diode
120W瞬态电压抑制器二极管

二极管
文件: 总2页 (文件大小:244K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESD05  
VOLTAGE:5V  
Elektronische Bauelemente  
120W Transient Voltage Suppressors Diode  
RoHS Compliant Product  
SOD-523  
FEATURES  
120 Watts peak pulse power ( t = 8 / 20 µs )  
*
*
*
Small package for use in portable electronics  
Suitable replacement for MLV’s in ESD protection  
applications  
Protects one I/O or power line  
Low clamping voltage  
*
*
*
*
Low leakage current  
CATHODE MARK  
Solid-state silicon-avalanche technology  
APPLICATIONS  
Cell Phone Handsets and Accessories  
*
*
*
*
*
*
Microprocessor based equipment  
0.3±0.05  
0.1±0.05  
Personal Digital Assistants ( PDA’s )  
Notebooks, Desktops, and Servers  
0.8±0.05  
0.6±0.1  
Portable Instrumentation  
Pagers Peripherals  
Dimensions in millimeters  
MECHANICAL DATA  
CASE: SOD-523 , Molded Plastic Epocy Meets UL 94 V-0  
TERMINALS: 100% Matte Sn  
POLARITY: See Diagrams  
*
*
*
*
*
*
K
A
WEIGHT: 0.0025 gram  
MOUNTING POSITION: Any  
MARKING: Z6  
MAXIMUM RATINGS  
Rating 25 o ambient temperature unless otherwise specified.  
C
TYPE NUMBER  
Peak Pulse Power ( tP = 8 / 20 µs )  
ESD Voltage ( HBM Waveform per IEC 61000-4-2 )  
Lead Soldering Temperature  
Operating Temperature Range  
Storage Temperature Range  
SYMBOL  
PPK  
VESD  
TL  
TJ  
TSTG  
VALUE  
120  
16  
UNITS  
W
kV  
oC  
oC  
oC  
260 ( 10 sec. )  
-55 ~ +150  
-55 ~ +150  
http://www.SeCoSGmbH.com/  
01-Jun-2002 Rev. A  
Any changing of specification will not be informed individual  
Page 1 of 2  
ESD05  
VOLTAGE:5V  
Elektronische Bauelemente  
120W Transient Voltage Suppressors Diode  
ELECTRICAL CHARACTERISTICS ( T = 25oC )  
TYPE NUMBER  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
SYMBOL  
VRWM  
VBR  
Min.  
-
6.5  
-
-
-
-
-
Typ.  
Max.  
5
-
0.5  
9.8  
18  
9
UNIT  
V
V
TEST CONDITIONS  
It = 1mA  
-
-
-
-
-
-
-
IR  
µA  
VRWM = 5V  
IPP = 5A, tP = 8 / 20 µs  
IPP = 9A, tP = 8 / 20 µs  
tP = 8 / 20 µs  
Clamping Voltage  
VC  
V
Peak Pulse Current  
Junction Capacitance  
IPP  
Cj  
A
pF  
150  
VR = 0V, f = 1MHz  
ELECTRICAL CHARACTERISTIC CURVES  
100  
t
r
PEAK VALUE I  
@ 8 ms  
RSM  
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
HALF VALUE I /2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
t, TIME (ms)  
60  
80  
µs Pulse Waveform  
Figure 1. 8 x 20  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 2 of 2  

相关型号:

ESD05000

Socket for SP/ST relay
CELDUC

ESD05000_1

Socket for SP/ST relay
CELDUC

ESD0501B2C

Surface Mount TVS For ESD Protection Diode
WEITRON

ESD0502B3E

2-Line TVS Array
WEITRON

ESD0502V23T-2A

Transient Voltage Suppressors Array for ESD Protection
UNSEMI

ESD0502V23T-2A

Transient Voltage Suppressors Array for ESD Protection
SOCAY

ESD0502V23T-2C

Transient Voltage Suppressors Array for ESD Protection
UNSEMI

ESD0502V23T-2C

Transient Voltage Suppressors Array for ESD Protection
SOCAY

ESD0524P

Ultra LowCapacitance ESD Protection Array
SEMITECH

ESD0524P_V1

Ultra LowCapacitance ESD Protection Array
SEMITECH

ESD0571P6-TP

Trans Voltage Suppressor Diode,
MCC

ESD0571P6-TP-HF

Trans Voltage Suppressor Diode,
MCC