KS05B4_15 [SECOS]
Ulta Low Capacitance double rail-to-rail ESD protection diode;
| 型号： | KS05B4_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Ulta Low Capacitance double rail-to-rail ESD protection diode |
| 文件： | 总2页 (文件大小：657K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KS05B4
VOLTAGE: 5.0V
Elektronische Bauelemente
Ulta Low Capacitance double rail-to-rail ESD protection diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DESCRIPTION
SOT-143
. Low Capacitance rail-to-rail ESD protection in a small package designed to protect.
two hi-speed data line or high-frequency signal lines from the damage caused by
ESD and other transients.
10o
.075(1.90)
Ref
o
0
.023Ref
(0.57)Ref
.018(0.45)
.014(0.35)
.055(1.40)
.047(1.20)
.100(2.55)
.089(2.25)
.033(0.84)
.030(0.76)
FEATURES
. Response time is typically < 1 ns
. Low leakage
.
(0.40)Ref
.016 Ref
.071(1.80)
.063(1.60)
.006(0.16)
.003(0.08)
. Stand-off voltage:5.0V
. IEC61000-4-2 level 4 ESD protection
. Ulta Low Capacitance : 1pF (I/O to ground)
.118(3.00)
.110(2.80)
.004(0.10)
.000(0.00)
.051(1.30)
.039(1.00)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
APPLICATION
. Digital Video Interface (DVI)/ High Definition Multimedia Interface (HDMI) interfaces.
. Wide Area Network (WAN)/ Local Area Network(LAN) systems.
. Cellular phones, MP3 players, digital cameras ... etc.
3
4
. Suitable for electronics where board space is a major design consideration.
2
1
MAXIMUM RATINGS
Rating 25oC ambient temperature unless otherwise specified.
PARAMETER
IEC61000-4-2, Level 4(ESD)
SYMBOL
VESD
LIMITS
UNITS
kV
>16
>8
Air
Contact
o
Lead Solder Temperature - Max. (10 sec duration)
TL
C
260
o
-55 ~ +125
-55 ~ +125
TJ
C
Junction Temperature Range
Storage Temperature Range
o
TSTG
C
Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only. Functional operation above
the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions
may affect device reliability.
ELECTRICAL CHARACTERISTICS (T= 25 oC unless otherwise noted,
Per Diode)
SYMBOL
VRWM
IR
Min.
-
Typ.
Max.
5.0
100
8.5
-
UNIT
TEST CONDITIONS
PARAMETER
Reverse Stand-Off Voltage
-
V
nA
V
-
-
VRWM
=
Reverse Leakage Current
Breakdown Voltage
3
V
VBR
6.1
-
IT = 1mA
, Pin 2,3 to Pin1
, Pin 4 to Pin1
Cz
CI/O
VF
1
F=1MHz,VR=0V
F=1MHz,VR=0V
IF=1mA
-
-
-
Diode Capacitance
Forward Voltage
pF
V
-
36
0.7
-
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
24-Sep-2007 Rev. B
Page 1 of 2
KS05B4
VOLTAGE: 5.0V
Elektronische Bauelemente
Ulta Low Capacitance double rail-to-rail ESD protection diode
Typical Capacitance vs. Voltage
Clamping Voltage vs. Peak Pulse Current
2.0
14
12
10
8
1.6
1.2
1.0
0.8
6
4
0.4
0
2
0
3
5
1
2
4
0
2
4
6
10
12
0
8
I/O to I/O Voltage (V)
Peak Pulse Current- Ipp (A)
Pulse Waveform
110
Wave form
Paramete rs:
100
90
80
70
60
50
40
30
20
10
0
tr = 8
s
td = 20
s
e-t
Recommended Pad Layout
td = IPP /2
0.80 (.032")
1.00 (.040")
1.40 (.055")
MAX
0
5
10
15
20
25
30
2.20
(.087")
REF
1.90
(.075")
1.70
3.40 (.134")
3.60 (.140")
Time (us)
(.067")
BSC
1.00 (.040") 0.80 (.032")
1.20 (.048") 1.00 (.040")
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
24-Sep-2007 Rev. B
Page 2 of 2
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