KS05E4 [SECOS]
Integrated ESD Protection Array;
| 型号： | KS05E4 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Integrated ESD Protection Array |
| 文件： | 总3页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KS05E4
Integrated ESD Protection Array
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SOT-26
The KS05E4 is designed to protect I/Os being sensitive concerning
capacitive load, such as USB2.0,Ethernet, DVI etc. from destruction
byElectroStatic Discharges (ESD).
A
E
L
Therefore, the KS05E4 incorporates four pairs of ultra-low capacity
rail-to-rail diodes plus an additional Zener diode to provide protection
to downstream signal and supply components from Electrostatic
Discharge (ESD) voltages as high as
B
Due to the rail-to-rail diodes being connected to the Zener diode,
the protection is working independent from the availability of a
supply voltage.
F
C
H
J
K
D G
The KS05E4 is fabricated using thin film-on-silicon technology
and integrates 4 ultra-low capacity rail-to-rail ESD protection
diodes in a miniature SOT-26 package
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.10
3.00
1.80
Min.
Max.
A
B
C
D
E
F
2.70
2.60
1.40
G
H
J
K
L
0
0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
APPLICATIONS
1.30 MAX.
1.90 REF.
0.30 0.50
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Digital Cameras
Portable Instrumentation
Notebooks, Desktops, and Serves
Personal Digital Assistants (PDAs)
Cell phone handsets and accessories
Top View
FEATURES
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low clamping voltage
Low leakage current
Small package
SOT-26 package
ESD IEC 6100-4-2 Level 4, ±8 kV Contact Discharge
Compliant Protection
MARKING
0 5 E 4
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= Date Code
PACKAGE INFORMATION
Package
MPQ
3K
Leader Size
SOT-26
7 inch
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Apr-2014 Rev. A
Page 1 of 3
KS05E4
Integrated ESD Protection Array
Elektronische Bauelemente
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Symbol
Value
±14
Unit
Air
IEC 61000-4-2 (ESD)
VESD
kV
Contact
VDD-GND
±8
Peak pulse current (tp=8/20us)
Peak pulse power (tp=8/20us)
Operating Temperature Range
Storage temperature range
Lead temperature
IPP
PPK
TJ
6
A
W
°C
°C
°C
100
-40~85
-55 ~ 125
260
TSTG
TL
.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Units
DC Input Voltage Range
VI/O
-
6
-
-
5.5
V
V
Zener Diode Breakdown Voltage,
Pin 5 to 2
VBRI/O
VF
I=1mA
-
0.7
-
9
-
Forward Voltage
V
Diode Reverse Leakage Current,
Pins 1,3,4,6 to Ground
Pin Capacitance to Ground,
Pins 1,3,4,6
IIkg
VRWM=3V
-
100
nA
Vdc=0V, f=1MHz
Pin 5=3V
CI/O
-
-
1.8
36
-
-
pF
pF
Zener Diode Capacitance to Ground,
Pin 5 to 2
Vdc=0V, f=1MHz
Pin 5=3V
CZENER
IPP=1A, tp=8/20us
IPP=4A, tp=8/20us
IPP=9A, tp=8/20us
-
-
-
-
-
-
8
V
V
V
Clamping Voltage, VDD-GND
VC
8.5
12
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Apr-2014 Rev. A
Page 2 of 3
KS05E4
Integrated ESD Protection Array
Elektronische Bauelemente
Applications Information
Universal Serial Bus 2.0 Protection
The KS05E4 is optimized to protect e.g. two USB 2.0 ports of Electro-Static-Discharge (ESD).
Each device is capable of protection both USB data lines and the VBUS supply. A typical application is
shown in the schematic below.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Apr-2014 Rev. A
Page 3 of 3
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