KS05UL5_18 [SECOS]

Ultra Low Capacitance ESD Protection Array;


型号：	KS05UL5_18
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	Ultra Low Capacitance ESD Protection Array
文件：	总2页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

KS05UL5

30W, 5V

Ultra Low Capacitance ESD Protection Array

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-fre

DESCRIPTION

KS05UL5 is an ultra-low capacitance TVS designed to

DFN2510

protection for high-speed data interfaces. With typical capacitance

of 0.6pF only, KS05UL5 is designed to protest parasitic-sensitive

systems against over-voltage and over-current transient events.

KS05UL5 uses ultra-small DFN2510 package. Each KS05UL5

device can protect four high-speed data lines. The combined features

of ultra-low capacitance, ultra-small size and high ESD robustness

make KS05UL5 ideal for high-speed data ports and high-frequency

lines (e.g., HDMI &DVI) applications. The low clamping voltage of the

KS05UL5 guarantees a minimum stress on the protected IC.

APPLICATIONS

Millimeter



PCI Express

REF.

Min.

2.40

0.90

Max.

2.60

1.10

Min.

0.00

0.30

Max.

0.05

0.40

Desktops, Servers and Notebooks

MDDI Ports

USP 2.0/3.0 Power and Data Line Protection

Display Ports

High Definition Multi-Media Interface(HDMI)

Digital Visual Interface(DVI)

0.55TYP.

0.150 REF.

0.500 BSC.

0.15

0.25

Pin Diagram

MARKING

0524P

PACKAGE INFORMATION

Package

MPQ

Leader Size

DFN2510

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Air contact

±25

±17

IEC 61000-4-2 (ESD)

V_ESD

Contact discharge

Peak pulse power (tp=8/20us)

P_PP

Operating & Storage temperature range

T_J, T_STG

-55~125, -55~150

°C

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Reverse Working Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage

Symbol

V_RWM

V_BR

Condition

Min.

Typ.

Max.

Units

Any I/O–to-GND

I_T=1mA, Any I/O–to-GND

V_RWM=5V, Any I/O–to-GND

I_PP=1A, tp=8/20us, Any I/O–to-GND

I/O-to-GND, V_R=0, f=1MHz

I/O-to-I/O, V_R=0, f=1MHz

I_R

0.1

μA

V_C

0.6

0.2

0.8

0.4

Parasitic capacitance

C_ESD

Note: I/O pins are pin 1,2,4,5.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

03-May-2018 Rev. D

Page 1 of 2

KS05UL5

30W, 5V

Ultra Low Capacitance ESD Protection Array

Elektronische Bauelemente

RATINGS AND CHARACTERISTICS CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

03-May-2018 Rev. D

Page 2 of 2

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