KSA539-R [SECOS]

PNP Plastic Encapsulated Transistor;
KSA539-R
型号: KSA539-R
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

PNP Plastic Encapsulated Transistor

放大器 晶体管
文件: 总1页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSA539  
-0.2A , -60V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURE  
TO-92  
Low Saturation Medium Current Application.  
Complementary to KSC815  
CLASSIFICATION OF hFE  
Product-Rank KSA539-R  
KSA539-O  
70~140  
KSA539-Y  
120~240  
Range  
40~80  
1Emitter  
2Base  
3Collector  
Base  
2
Millimeter  
Millimeter  
REF.  
REF.  
3
Collector  
Min.  
Max.  
4.70  
4.70  
-
Min.  
Max.  
A
B
C
D
E
4.40  
4.30  
12.70  
3.30  
0.36  
F
G
H
J
0.30  
0.51  
1.27 TYP.  
1.10  
2.42  
0.36  
1.40  
2.66  
0.76  
1
Emitter  
3.81  
0.56  
K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Symbol  
Ratings  
Unit  
VCBO  
VCEO  
VEBO  
IC  
-60  
V
V
Collector to Emitter Voltage  
-45  
-5  
Emitter to Base Voltage  
V
Collector Current - Continuous  
Collector Power Dissipation  
-200  
mA  
mW  
°C / W  
°C  
PC  
400  
Thermal Resistance From Junction To Ambient  
Junction, Storage Temperature  
Rθ  
JA  
312  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-60  
-45  
-5  
-
-
-
-
-
-
-
-
-
-
-
V
V
IC= -0.1mA, IE=0  
-
IC= -10mA, IB=0  
-
V
IE= -0.01mA, IC=0  
VCB= -45V, IE=0  
-0.1  
-0.1  
240  
-0.5  
-1.2  
-0.9  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
-
VEB= -3V, IC=0  
DC Current Gain  
hFE  
40  
-
VCE= -1V, IC= -50mA  
IC= -150mA, IB= -15mA  
IC= -150mA, IB= -15mA  
VCE= -1V, IC= -10mA  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Base to Emitter Voltage  
VCE(sat)  
VBE(sat)  
VBE  
V
V
V
-
-0.6  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
07-Dec-2012 Rev. A  
Page 1 of 1  

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