KSC2383L [SECOS]

1A , 160V NPN Plastic Encapsulated Transistor;
KSC2383L
型号: KSC2383L
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

1A , 160V NPN Plastic Encapsulated Transistor

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中文:  中文翻译
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KSC2383L  
1A , 160V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92L  
FEATURE  
G
H
Low collector to emitter saturation voltage VCE(sat).  
1Emitter  
2Collector  
3Base  
Audio power amplifier  
High Current  
J
A
D
Millimeter  
REF.  
Min.  
4.70  
7.80  
13.80  
3.70  
0.35  
0.35  
Max.  
5.10  
8.20  
14.20  
4.10  
0.55  
0.45  
B
A
B
C
D
E
F
CLASSIFICATION OF hFE  
K
E
Product-Rank  
KSC2383L-R KSC2383L-O  
KSC2383L-Y  
160~320  
C
F
Range  
60~120 100~200  
G
H
J
1.27 TYP.  
1.28  
2.44  
0.60  
1.58  
2.64  
0.80  
K
Collector  
2
3
Base  
1
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
160  
160  
6
V
V
V
Continuous Collector Current  
Collector Power Dissipation  
Junction, Storage Temperature  
1
A
PC  
0.75  
W
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=100µA, IE=0  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut - Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
160  
-
-
-
V
V
V
160  
-
IC=10mA, IB=0  
6
-
-
-
1
IE=10µA, IC=0  
-
µA VCB=150V, IE=0  
µA VCB=150V, REB=10MΩ  
µA VEB=6V, IC=0  
Collector Cut - Off Current  
ICER  
-
-
10  
1
Emitter cut-off current  
IEBO  
-
-
60  
40  
-
-
320  
-
VCE=5V, IC=200mA  
DC Current Gain  
hFE  
-
VCE=5V, IC=10mA  
Collector to Emitter Saturation Voltage  
Base – Emitter Voltage  
VCE(sat)  
VBE  
-
1
V
V
IC=500mA, IB=50mA  
VCE=5V, IC=5mA  
-
-
0.75  
-
Transition Frequency  
fT  
-
20  
MHz VCE=5V, IC=200mA  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
15-Sep -2014 Rev. A  
Page 1 of 2  
KSC2383L  
1A , 160V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
15-Sep -2014 Rev. A  
Page 2 of 2  

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