KSC2383L [SECOS]
1A , 160V NPN Plastic Encapsulated Transistor;型号: | KSC2383L |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | 1A , 160V NPN Plastic Encapsulated Transistor |
文件: | 总2页 (文件大小:416K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSC2383L
1A , 160V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92L
FEATURE
G
H
ꢀ
Low collector to emitter saturation voltage VCE(sat).
1Emitter
2Collector
3Base
ꢀ
ꢀ
Audio power amplifier
High Current
J
A
D
Millimeter
REF.
Min.
4.70
7.80
13.80
3.70
0.35
0.35
Max.
5.10
8.20
14.20
4.10
0.55
0.45
B
A
B
C
D
E
F
CLASSIFICATION OF hFE
K
E
Product-Rank
KSC2383L-R KSC2383L-O
KSC2383L-Y
160~320
C
F
Range
60~120 100~200
G
H
J
1.27 TYP.
1.28
2.44
0.60
1.58
2.64
0.80
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
160
160
6
V
V
V
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
1
A
PC
0.75
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=100µA, IE=0
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut - Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
160
-
-
-
V
V
V
160
-
IC=10mA, IB=0
6
-
-
-
1
IE=10µA, IC=0
-
µA VCB=150V, IE=0
µA VCB=150V, REB=10MΩ
µA VEB=6V, IC=0
Collector Cut - Off Current
ICER
-
-
10
1
Emitter cut-off current
IEBO
-
-
60
40
-
-
320
-
VCE=5V, IC=200mA
DC Current Gain
hFE
-
VCE=5V, IC=10mA
Collector to Emitter Saturation Voltage
Base – Emitter Voltage
VCE(sat)
VBE
-
1
V
V
IC=500mA, IB=50mA
VCE=5V, IC=5mA
-
-
0.75
-
Transition Frequency
fT
-
20
MHz VCE=5V, IC=200mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Sep -2014 Rev. A
Page 1 of 2
KSC2383L
1A , 160V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Sep -2014 Rev. A
Page 2 of 2
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