KTC1027 [SECOS]
NPN Plastic Encapsulated Transistor;
| 型号： | KTC1027 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic Encapsulated Transistor 晶体管 |
| 文件： | 总1页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTC1027
0.8A , 120V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92L
FEATURE
G
H
ꢀ
Low collector to emitter saturation voltage VCE(sat)
Audio power amplifier
High Current
.
1Emitter
2Collector
3Base
ꢀ
ꢀ
J
A
D
Millimeter
REF.
Min.
4.70
7.80
13.80
3.70
0.35
0.35
Max.
5.10
8.20
14.20
4.10
0.55
0.45
A
B
C
D
E
F
CLASSIFICATION OF hFE
B
Product-Rank
KTC1027-O
KTC1027-Y
120~240
K
E
Range
80~160
G
H
J
1.27 TYP.
1.28
2.44
0.60
1.58
2.64
0.80
C
F
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
120
120
5
V
V
V
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance
0.8
0.75
167
A
PC
W
RθJA
TJ, TSTG
°C / W
°C
Junction, Storage Temperature
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=1mA, IE=0
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut - Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
120
-
-
-
V
V
V
120
-
IC=10mA, IB=0
IE=1mA, IC=0
5
-
-
-
-
0.1
0.1
240
1
µA VCB=120V, IE=0
µA VEB=5V, IC=0
VCE=5V, IC=100mA
Emitter cut-off current
IEBO
-
-
DC Current Gain
hFE
80
-
-
Collector to Emitter Saturation Voltage
Base – Emitter Voltage
VCE(sat)
VBE
-
V
V
IC=0.5A, IB=50mA
-
-
-
1
VCE=5V, IC=500mA
VCB=10V, IE=0, f=1MHz
Collector Output Capacitance
Transition Frequency
Cob
-
30
-
pF
fT
-
120
MHz VCE=5V, IC=100mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Dec-2012 Rev. A
Page 1 of 1
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