KTC3879 [SECOS]
0.05A , 35V NPN Plastic Encapsulated Transistor; 0.05A ， 35V NPN塑料封装晶体管
| 型号： | KTC3879 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 0.05A , 35V NPN Plastic Encapsulated Transistor |
| 文件： | 总1页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTC3879
0.05A , 35V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
ꢀ
High Power Gain
L
3
3
APPLICATIONS
Top View
C B
1
ꢀ
High Frequency Application
HF, VHF Band Amplifier Application
1
2
2
ꢀ
K
F
E
D
CLASSIFICATION OF hFE
H
J
G
Product-Rank
KTC3879-R
KTC3879-O
KTC3879-Y
120~240
RY
Millimeter
Min.
Millimeter
REF.
REF.
Range
40~80
70~140
RO
Max.
3.04
2.55
1.40
1.15
2.04
0.50
Min.
0.09
0.45
0.08
Max.
0.18
0.60
0.177
A
B
C
D
E
F
2.80
2.10
1.20
0.89
1.78
0.30
G
H
J
K
L
Marking Code
RR
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Collector
Package
MPQ
Leader Size
7 inch
3
SOT-23
3K
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
35
30
4
V
V
V
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
50
150
mA
mW
PC
RθJA
833
°C / W
°C
Junction, Storage Temperature
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
35
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=100µA, IE=0
IC=100µA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VCE=25V, IB=0
VEB=4V, IC=0
30
4
-
V
-
0.1
0.2
1
µA
µA
µA
Collector Cut-Off Current
ICEO
-
-
Emitter Cut-Off Current
IEBO
DC Current Gain
hFE
40
-
240
0.4
1
VCE=12V, IC=2mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
V
V
-
100
-
MHz VCE=10V, IC=1mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A
Page 1 of 1
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