MMBD4448HTC [SECOS]

Plastic-Encapsulated Switching Diode; 塑料封装开关二极管
MMBD4448HTC
型号: MMBD4448HTC
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Plastic-Encapsulated Switching Diode
塑料封装开关二极管

二极管 开关
文件: 总2页 (文件大小:283K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBD4448HT Series  
Plastic-Encapsulated Switching Diode  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-523  
FEATURES  
Fast switching speed  
For General Purpose Switching Applications  
High Conductance  
A
L
3
3
Top View  
C B  
1
1
2
MARKING  
2
K
F
E
Product  
MMBD4448HT  
MMBD4448HTA  
MMBD4448HTC MMBD4448HTS  
D
A3  
A6  
A7  
AB  
Marking  
H
J
G
Millimeter  
Millimeter  
REF.  
REF.  
Circuit  
Min.  
Max.  
Min.  
Max.  
A
B
C
D
E
F
1.5  
1.45  
0.75  
0.7  
1.7  
G
H
J
K
L
-
0.1  
1.75  
0.85  
0.9  
0.55 REF.  
0.1  
0.2  
-
0.9  
1.1  
0.5 TYP.  
0.25 0.325  
PACKAGE INFORMATION  
0.15  
0.25  
M
Package  
MPQ  
3K  
Leader Size  
SOT-523  
7 inch  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameters  
Symbol  
VRM  
VRRM  
Rating  
100  
80  
Unit  
V
V
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RWM  
80  
V
V
R
80  
V
RMS Reverse Voltage  
V
R(RMS)  
57  
V
Forward Continuous Current  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge  
Current  
IFM  
500  
250  
4.0  
mA  
mA  
IO  
t=1.0µs  
IFSM  
A
t=1.0s  
1.5  
Power Dissipation  
PD  
150  
833  
-65~150  
mW  
°C / W  
°C  
Thermal Resistance, Junction to Ambient  
Storage Temperature  
RθJA  
TSTG  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameters  
Symbol  
VR  
Min.  
Max.  
-
0.72  
0.855  
1
Unit  
Test Conditions  
IR=2.5µA  
IF=5mA  
Reverse Breakdown Voltage  
80  
V
V
VF1  
VF2  
VF3  
VF4  
IR1  
0.62  
-
-
-
-
V
IF=10mA  
Forward Voltage  
V
IF=100mA  
IF=150mA  
VR=70V  
1.25  
0.1  
25  
V
µA  
nA  
pF  
nS  
Maximum DC Reverse Current at rated  
DC blocking voltage  
IR2  
VR=20V  
Capacitance between terminals  
Maximum Reverse Recovery Time  
CT  
3.5  
4
V
V
R
=6V, f=1MHz  
=6V, I =5mA  
TRR  
-
R
F
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
21-Jul-2011 Rev. A  
Page 1 of 2  
MMBD4448HT Series  
Plastic-Encapsulated Switching Diode  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
21-Jul-2011 Rev. A  
Page 2 of 2  

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