MMBD4448HTC [SECOS]
Plastic-Encapsulated Switching Diode; 塑料封装开关二极管型号: | MMBD4448HTC |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | Plastic-Encapsulated Switching Diode |
文件: | 总2页 (文件大小:283K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBD4448HT Series
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES
ꢀ
ꢀ
ꢀ
Fast switching speed
For General Purpose Switching Applications
High Conductance
A
L
3
3
Top View
C B
1
1
2
MARKING
2
K
F
E
Product
MMBD4448HT
MMBD4448HTA
MMBD4448HTC MMBD4448HTS
D
A3
A6
A7
AB
Marking
H
J
G
Millimeter
Millimeter
REF.
REF.
Circuit
Min.
Max.
Min.
Max.
A
B
C
D
E
F
1.5
1.45
0.75
0.7
1.7
G
H
J
K
L
-
0.1
1.75
0.85
0.9
0.55 REF.
0.1
0.2
-
0.9
1.1
0.5 TYP.
0.25 0.325
PACKAGE INFORMATION
0.15
0.25
M
Package
MPQ
3K
Leader Size
SOT-523
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameters
Symbol
VRM
VRRM
Rating
100
80
Unit
V
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RWM
80
V
V
R
80
V
RMS Reverse Voltage
V
R(RMS)
57
V
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge
Current
IFM
500
250
4.0
mA
mA
IO
t=1.0µs
IFSM
A
t=1.0s
1.5
Power Dissipation
PD
150
833
-65~150
mW
°C / W
°C
Thermal Resistance, Junction to Ambient
Storage Temperature
RθJA
TSTG
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameters
Symbol
VR
Min.
Max.
-
0.72
0.855
1
Unit
Test Conditions
IR=2.5µA
IF=5mA
Reverse Breakdown Voltage
80
V
V
VF1
VF2
VF3
VF4
IR1
0.62
-
-
-
-
V
IF=10mA
Forward Voltage
V
IF=100mA
IF=150mA
VR=70V
1.25
0.1
25
V
µA
nA
pF
nS
Maximum DC Reverse Current at rated
DC blocking voltage
IR2
VR=20V
Capacitance between terminals
Maximum Reverse Recovery Time
CT
3.5
4
V
V
R
=6V, f=1MHz
=6V, I =5mA
TRR
-
R
F
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jul-2011 Rev. A
Page 1 of 2
MMBD4448HT Series
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jul-2011 Rev. A
Page 2 of 2
相关型号:
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Rectifier Diode, 2 Element, 0.25A, 80V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
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MCC
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